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PDF IXGN50N120C3H1 Data sheet ( Hoja de datos )
| Número de pieza | IXGN50N120C3H1 | |
| Descripción | High-Speed PT IGBT | |
| Fabricantes | IXYS | |
| Logotipo |  |
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GenX3TM 1200V
IGBT w/ Diode
High-Speed PT IGBT for
20-50 kHz Switching
Advance Technical Information
IXGN50N120C3H1
VCES
IC110
VCE(sat)
= 1200V
= 50A
≤£ 4.2V
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
VGE= 15V, TVJ = 125°C, RG = 2Ω
Clamped Inductive Load
TC = 25°C
50/60Hz
IISOL ≤ 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
Maximum Ratings
1200
V
1200
V
±20 V
±30 V
95 A
50 A
58 A
240 A
ICM = 100
VCE ≤ VCES
460
A
W
-55 ... +150
150
-55 ... +150
2500
3000
°C
°C
°C
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30 g
SOT-227B, miniBLOC
E153432
Ec
G
Ec
C
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
Features
z Optimized for Low Switching Losses
z Square RBSOA
z High Current Capability
z Isolation Voltage 2500V~
z Anti-Parallel Ultra Fast Diode
z International Standard Package
Advantages
z High Power Density
z Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE= 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 40A, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
3.0 5.0 V
250 μA
14 mA
±100 nA
4.2 V
2.6 V
Applications
z Power Inverters
z UPS
z SMPS
z PFC Circuits
z Welding Machines
z Lamp Ballasts
© 2010 IXYS CORPORATION, All Rights Reserved
DS100246(03/10)
http://www.Datasheet4U.com
1 page  
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
6.0
5.5 Eoff
Eon - - - -
TJ = 125ºC , VGE = 15V
5.0 VCE = 600V
4.5 I C = 80A
4.0
11
10
9
8
7
3.5 6
3.0
2.5 I C = 40A
5
4
2.0 3
1.5
2345
6789
RG - Ohms
2
10 11 12 13 14 15
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
4.0
10
3.6 Eoff
Eon - - - -
3.2
RG = 2Ω , VGE = 15V
VCE = 600V
2.8
I C = 80A
9
8
7
2.4 6
2.0 5
1.6
I C = 40A
4
1.2 3
0.8 2
0.4 1
0.0 0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
450 260
400 t f i t d(off) - - - - 240
RG = 2Ω , VGE = 15V
350
VCE = 600V
220
300 200
250 180
200
TJ = 125ºC
160
150 140
100 120
50
TJ = 25ºC
100
0 80
20 30 40 50 60 70 80
IC - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
IXGN50N120C3H1
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
4.0
Eoff Eon - - - -
3.5 RG = 2Ω , VGE = 15V
3.0 VCE = 600V
TJ = 125ºC
2.5
2.0
1.5
1.0 TJ = 25ºC
0.5
0.0
20 30 40 50 60 70
IC - Amperes
8
7
6
5
4
3
2
1
0
80
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
500 600
450 t f i
t d(off) - - - -
400
TJ = 125ºC, VGE = 15V
VCE = 600V
350
550
500
450
300
250 I C = 40A
400
350
200 300
150
I C = 80A
250
100 200
50 150
0
2 3 4 5 6 789
100
10 11 12 13 14 15
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
350 180
t f i t d(off) - - - -
300 RG = 2Ω , VGE = 15V
VCE = 600V
250
I C = 40A
170
160
200 150
150 140
I C = 80A
100 130
50 120
0 110
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXGN50N120C3H1.PDF ] | |
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