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CY14B116N の電気的特性と機能

CY14B116NのメーカーはCypress Semiconductorです、この部品の機能は「16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 CY14B116N
部品説明 16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM
メーカ Cypress Semiconductor
ロゴ Cypress Semiconductor ロゴ 




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CY14B116N Datasheet, CY14B116N PDF,ピン配置, 機能
PRELIMINARY
CY14B116L/CY14B116N/CY14B116S
CY14E116L/CY14E116N/CY14E116S
16-Mbit (2048 K × 8/1024 K × 16/512 K × 32)
nvSRAM
Features
16-Mbit nonvolatile static random access memory (nvSRAM)
25-ns, 30-ns and 45-ns access times
Internally organized as 2048 K × 8 (CY14X116L),
1024 K × 16 (CY14X116N), 512 K × 32 (CY14X116S)
Hands-off automatic STORE on power-down with only a
small capacitor
STORE to QuantumTrap nonvolatile elements is initiated by
software, device pin, or AutoStore on power-down
RECALL to SRAM initiated by software or power-up
High reliability
Infinite read, write, and RECALL cycles
1 million STORE cycles to QuantumTrap
Data retention: 20 years
Sleep mode operation
Low power consumption
Active current of 75 mA at 45 ns
Standby mode current of 650 A
Sleep mode current of 10 A
Operating voltages:
CY14B116X: VCC = 2.7 V to 3.6 V
CY14E116X: VCC = 4.5 V to 5.5 V
Industrial temperature: –40 C to +85 C
Packages
44-pin thin small-outline package (TSOP II)
48-pin thin small-outline package (TSOP I)
54-pin thin small-outline package (TSOP II)
165-ball fine-pitch ball grid array (FBGA) package
Restriction of hazardous substances (RoHS) compliant
Offered speeds
44-pin TSOP II: 25 ns and 45 ns
48-pin TSOP I: 30 ns and 45 ns
54-pin TSOP II: 25 ns and 45 ns
165-ball FBGA: 25 ns and 45 ns
Functional Description
The C ypress CY14X1 16L/CY14X116N/CY14X116S i s a fast
SRAM, with a no nvolatile el ement in each memory cel l. T he
memory is organized as 2048 K bytes of 8 bits each or 1024 K
words of 16 bits each o r 512 K words of 32 bit s each . T he
embedded non volatile elemen ts inco rporate Qu antumTrap
technology, prod ucing the world’s mo st reli able nonvolatile
memory. The SRAM can be read and written an infinite number
of times. The nonvolatile d ata residin g in the nonvolatile
elements do not change when data is written to the SRAM. Data
transfers from th e SRAM to the nonvolatile e lements (the
STORE operation) takes place automatically at power-down. On
power-up, data is restored to the SRAM (the RECALL operation)
from th e non volatile me mory. Both th e ST ORE an d RECALL
operations are also available under software control.
Errata: The engineering samples do not meet the address hold after end of write (tHA) and static discharge voltage specifications. For information on silicon errata, see
Errata on page 33. Details include trigger conditions, devices affected, and proposed workaround.
Cypress Semiconductor Corporation • 198 Champion Court
Document #: 001-67793 Rev. *G
• San Jose, CA 95134-1709 • 408-943-2600
Revised May 1, 2014http://www.Datasheet4U.com

1 Page





CY14B116N pdf, ピン配列
PRELIMINARY CY14B116L/CY14B116N/CY14B116S
CY14E116L/CY14E116N/CY14E116S
Contents
Pinouts .............................................................................. 4
Pin Definitions .................................................................. 7
Device Operation .............................................................. 8
SRAM Read ....................................................................... 8
SRAM Write ....................................................................... 8
AutoStore Operation (Power-Down) ............................... 8
Hardware STORE (HSB) Operation................................. 9
Hardware RECALL (Power-Up) ....................................... 9
Software STORE ............................................................... 9
Software RECALL............................................................. 9
Sleep Mode...................................................................... 10
Preventing AutoStore..................................................... 12
Data Protection ............................................................... 12
Maximum Ratings........................................................... 13
Operating Range............................................................. 13
DC Electrical Characteristics ........................................ 13
Data Retention and Endurance ..................................... 14
Capacitance .................................................................... 14
Thermal Resistance........................................................ 14
AC Test Conditions ........................................................ 15
AC Switching Characteristics ....................................... 16
AutoStore/Power-Up RECALL Characteristics............ 20
Sleep Mode Characteristics........................................... 21
Software Controlled STORE and RECALL
Characteristics................................................................ 22
Hardware STORE Characteristics................................. 23
Truth Table For SRAM Operations................................ 24
For ×8 Configuration ................................................. 24
For ×8 Configuration ................................................. 24
For ×16 Configuration ............................................... 24
For ×16 Configuration ............................................... 25
For ×32 Configuration ............................................... 25
Ordering Information...................................................... 26
Ordering Code Definitions ......................................... 27
Package Diagrams.......................................................... 28
Acronyms ........................................................................ 32
Document Conventions ................................................. 32
Units of Measure ....................................................... 32
Errata ............................................................................... 33
Part Numbers Affected .............................................. 33
16-Mbit (2048 K × 8, 1024 K × 16, 512 K × 32)
nvSRAM Qualification Status .................................... 33
16-Mbit (2048 K × 8, 1024 K × 16) nvSRAM Errata
Summary ................................................................... 33
Document History Page ................................................. 36
Sales, Solutions, and Legal Information ...................... 38
Worldwide Sales and Design Support....................... 38
Products .................................................................... 38
PSoC® Solutions ...................................................... 38
Cypress Developer Community................................. 38
Technical Support ..................................................... 38
Document #: 001-67793 Rev. *G
Page 3 of 38


3Pages


CY14B116N 電子部品, 半導体
PRELIMINARY CY14B116L/CY14B116N/CY14B116S
CY14E116L/CY14E116N/CY14E116S
Pinouts (continued)
Figure 6. Pin Diagram: 165-Ball FBGA (×32)
1 2 3 4 5 6 7 8 9 10 11
A NC A6 A8 WE BA CE1 BC OE A5 A3 NC
B
NC
DQ0
DQ1
A4
BB CE2 BD
A2 NC NC DQ31
C
ZZ NC DQ4 VSS A0
A7
A1
VSS
NC
DQ27
DQ26
D
NC
DQ2
DQ5
VSS
VSS
VSS
VSS
VSS
NC
NC DQ30
E
NC
VCAP
DQ6
VCC
VSS
VSS
VSS
VCC
NC
DQ25
DQ29
F
NC
DQ3
DQ7
VCC
VCC
VSS
VCC
VCC
NC
NC DQ24
G HSB NC DQ12 VCC VCC VSS VCC VCC NC NC DQ28
H
NC
NC
VCC
VCC
VCC
VSS
VCC
VCC
VCC
NC
NC
J
NC
NC
DQ13
VCC
VCC
VSS
VCC
VCC
NC
DQ20
DQ19
K NC NC DQ8 VCC VCC VSS VCC VCC NC NC DQ18
L
NC
DQ9
DQ14
VCC
VSS
VSS
VSS
VCC
NC
NC DQ21
M
NC
NC DQ15 VSS VSS VSS VSS VSS
NC
DQ22
DQ17
N
NC
DQ10
DQ11
VSS
A11
A10
A9
VSS NC
NC DQ16
P NC NC NC A13 NC NC A18 A12 NC DQ23 NC
R NC NC A15 NC A17 NC A16 NC[7] A14 NC NC
Note
7. Address expansion for 32-Mbit. NC pin not connected to die.
Document #: 001-67793 Rev. *G
Page 6 of 38

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
CY14B116K

16-Mbit (2048 K x 8/1024 K x 16) nvSRAM

Cypress Semiconductor
Cypress Semiconductor
CY14B116L

16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM

Cypress Semiconductor
Cypress Semiconductor
CY14B116M

16-Mbit (2048 K x 8/1024 K x 16) nvSRAM

Cypress Semiconductor
Cypress Semiconductor
CY14B116N

16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM

Cypress Semiconductor
Cypress Semiconductor


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