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Datasheet 2N2609 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N2609 | P-Channel Silicon Junction Field-Effect Transistor 8/2014
2N2608, 2N2609
P-Channel Silicon Junction Field-Effect Transistor
∙ Low-Level Choppers ∙ Data Switches ∙ Commutators
Absolute maximum ratings at TA = 25oC
Reverse Gate Source & Gate Drain Voltage -30V
Continuous Forward Gate Current
50 mA
Continuous Device Power Dissipation 300 |  InterFET | transistor |
| 2 | 2N2609 | JFET GENERAL PURPOSE 2N2608 2N2609
CASE 22-03, STYLE 12
TO-18 (TO-206AA) JFET
GENERAL PURPOSE
—P-CHANNEL DEPLETION
Refer to 2N5460 for graphs.
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Gate Current
@Total Device Dissipation T/^ = 25°C
Derate above 25°C Storage Temperature R |  Motorola Semiconductors | data |
| 3 | 2N2609 | POWER MOSFET P CHANNEL Technical Data
2N2609 JAN POWER MOSFET P CHANNEL
Processed per MIL-PRF-19500/296
…DESIGNED FOR GENERAL PURPOSE SMALL SIGNAL SWITCHING AND AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS (TA = 250C unless otherwise noted) Parameters / Test Conditions Symbol Value Gate-Source Voltage VGSS 30 0 Powe |  NES | mosfet |
| 4 | 2N2609 | P-CHANNEL J-FET TECHNICAL DATA
P-CHANNEL J-FET
Qualified per MIL-PRF-19500/296 Devices 2N2609 Qualified Level JAN
ABSOLUTE MAXIMUM RATINGS (TA = +250C unless otherwise noted) Parameters / Test Conditions Symbol Value
Gate-Source Voltage Power Dissipation (1) TA = +250C Operating Junction & Storage Temperature Rang |  Microsemi Corporation | data |
| 5 | 2N2609 | Trans JFET P-CH 3-Pin TO-18 |  New Jersey Semiconductor | data |
2N2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N20 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N20
·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 3.5Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching power supplies,converte  Inchange Semiconductor mosfet | | |
| 2 | 2N2000 | (2N2000 / 2N2001) alloy-junction germanium transistors w
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 ETC transistor | | |
| 3 | 2N2001 | (2N2000 / 2N2001) alloy-junction germanium transistors w
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ETC transistor | | |
| 4 | 2N2017 | Small Signal Transistors Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION
VCBO (V)
2N1975 NPN AMPL/SWITCH 2N1983 NPN AMPL/SWITCH 2N1984 NPN AMPL/SWITCH 2N1985 NPN AMPL/SWITCH 2N1986 NPN AMPL/SWITCH 2N1987 NPN AMPL/SWITCH 2N1988 NPN AMPL/SWITCH 2N1989 NPN AMPL/SWITCH 2N1990 NPN AMPL/SWITCH 2N2017 NPN A  Central Semiconductor transistor | | |
| 5 | 2N2017 | Trans GP BJT NPN 60V 0.5A 6-Pin TO-78 New Jersey Semiconductor data | | |
| 6 | 2N2018 | Trans GP BJT NPN 60V 0.5A 6-Pin TO-78 New Jersey Semiconductor data | | |
| 7 | 2N2019 | Trans GP BJT NPN 60V 0.5A 6-Pin TO-78 New Jersey Semiconductor data | |
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