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IRLML6302 の電気的特性と機能

IRLML6302のメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRLML6302
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRLML6302 Datasheet, IRLML6302 PDF,ピン配置, 機能
l Generation V Technology
l Ultra Low On-Resistance
l P-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
A customized leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
G1
S2
PD - 91259G
IRLML6302
HEXFET® Power MOSFET
VDSS = -20V
3D
RDS(on) = 0.60Ω
Micro3
Max.
-0.78
-0.62
-4.9
540
4.3
± 12
-5.0
-55 to + 150
Units
A
mW
mW/°C
V
V/ns
°C
Thermal Resistance
Parameter
RθJA Maximum Junction-to-Ambient „
Typ.
–––
Max.
230
Units
°C/W
www.irf.com
1
12/14/11
http://www.Datasheet4U.com

1 Page





IRLML6302 pdf, ピン配列
10 VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
1
0.1
0.01
0.1
20μs PULSE WIDTH
-1.5V TJ = 25°C
A
1 10
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
TJ = 25°C
TJ = 150°C
1
0.1
0.01
1.5
VDS = -10V
20μs PULSE WIDTH
2.0 2.5 3.0 3.5 4.0 4.5A
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
IRLML6302
10 VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
1
0.1
0.01
0.1
-1.5V
20μs PULSE WIDTH
TJ = 150°C
1
A
10
-VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0 ID = -0.61A
1.5
1.0
0.5
0.0
-60
VGS = -4.5V A
-40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRLML6302 電子部品, 半導体
IRLML6302
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
‚
-
+ Circuit Layout Considerations
Low Stray Inductance
ƒ
Ground Plane
Low Leakage Inductance
C urrent Transformer
-
- „+

RG
VGS*
**
dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
-
VDD*
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
[VDD]
Ripple 5%
[ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
www.irf.com
6

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共有リンク

Link :


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IRLML6302PBF

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IRLML6302PBF-1

Power MOSFET ( Transistor )

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International Rectifier


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