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1N5626 の電気的特性と機能

1N5626のメーカーはVishayです、この部品の機能は「Standard Avalanche Sinterglass Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 1N5626
部品説明 Standard Avalanche Sinterglass Diode
メーカ Vishay
ロゴ Vishay ロゴ 




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1N5626 Datasheet, 1N5626 PDF,ピン配置, 機能
www.vishay.com
1N5624, 1N5625, 1N5626, 1N5627
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
949588
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per
MIL-STD-750, method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Controlled avalanche characteristics
• Low reverse current
• High surge current loading
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Rectification diode, general purpose
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
1N5627
1N5627-TR
1N5627
1N5627-TAP
TAPED UNITS
2500 per 10" tape and reel
2500 per ammopack
MINIMUM ORDER QUANTITY
12 500
12 500
PARTS TABLE
PART
1N5624
1N5625
1N5626
1N5627
TYPE DIFFERENTIATION
VR = 200 V; IF(AV) = 3 A
VR = 400 V; IF(AV) = 3 A
VR = 600 V; IF(AV) = 3 A
VR = 800 V; IF(AV) = 3 A
PACKAGE
SOD-64
SOD-64
SOD-64
SOD-64
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
1N5624
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
1N5625
1N5626
1N5627
Peak forward surge current
Repetitive peak forward current
tp = 10 ms, half sinewave
Average forward current
Pulse avalanche peak power
Pulse energy in avalanche mode, non repetitive
(inductive load switch off)
i2*t-rating
tp = 20 μs, half sine wave,
Tj = 175 °C
I(BR)R = 1 A, Tj = 175 °C
Junction and storage temperature range
SYMBOL
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
IFSM
IFRM
IF(AV)
PR
VALUE
200
400
600
800
100
18
3A
1000
UNIT
V
V
V
V
A
A
W
ER
i2*t
Tj = Tstg
20
40
- 55 to + 175
mJ
A2*s
°C
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Junction ambient
l = 10 mm, TL = constant
On PC board with spacing 25 mm
RthJA
RthJA
VALUE
25
70
UNIT
K/W
K/W
Rev. 1.6, 05-Sep-13
1 Document Number: 86063
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
http://www.Datasheet4U.com

1 Page





1N5626 pdf, ピン配列
www.vishay.com
1N5624, 1N5625, 1N5626, 1N5627
Vishay Semiconductors
300
VR =V RRM
250
200 PR –L imit
@ 100%V R
150
100 PR –L imit
@ 80%V R
50
16395
0
25
50 75 100 125 150 175
T j – J unction Temperature ( °C )
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
100
90
80
70
60
50
40
30
20
10
0
0.1
16396
f=1M H z
1.0 10.0
V R – R everse Voltage ( V )
100.0
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-64
Sintered Glass Case
SOD-64
Cathode Identification
4.3 (0.168) max.
1.35 (0.053) max.
26(1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
4 (0.156) max.
26 (1.014) min.
Rev. 1.6, 05-Sep-13
3 Document Number: 86063
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


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共有リンク

Link :


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