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Datasheet 1N5625 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N5625 | GLASS PASSIVATED JUNCTION RECTIFIER 1N5624 THRU 1N5627
GLASS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage - 200 to 800 Volts
D *
CASE STYLE G3
Forward Current - 3.0 Amperes
FEATURES
♦ Glass passivated cavity-free junction ♦ High temperature metallurgically bonded constructed ♦ Hermetically sealed package ♦ Capable of meeting |  General Semiconductor | rectifier |
| 2 | 1N5625 | Lead Mounted Rectifier |  Powerex Power Semiconductors | rectifier |
| 3 | 1N5625 | Standard Avalanche Sinterglass Diode 1N5624, 1N5625, 1N5626, 1N5627
www.vishay.com
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading
949588
MECHANICAL DATA
Ca |  Vishay | diode |
| 4 | 1N5625GP | GLASS PASSIVATED JUNCTION RECTIFIER 1N5624GP THRU 1N5627GP
GLASS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage - 200 to 800 Volts
*
DO-201AD
Forward Current - 3.0 Amperes
FEATURES
♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically bonded construction ♦ Glass passiv | General Semiconductor | rectifier |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
| 3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re  Unisonic Technologies mosfet | | |
| 4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
| 5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
| Esta página es del resultado de búsqueda del 1N5625. Si pulsa el resultado de búsqueda de 1N5625 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
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