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IXTH440N055T2 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTH440N055T2
部品説明 Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTH440N055T2 Datasheet, IXTH440N055T2 PDF,ピン配置, 機能
Advance Technical Information
TrenchT2TM
Power MOSFET
IXTH440N055T2
IXTT440N055T2
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
VDSS =
ID25 =
RDS(on)
55V
440A
1.8mΩ
TO-247 (IXTH)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
ILRMS
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
Tsold
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C (Chip Capability)
Lead Current Limit, RMS
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
Maximum Ratings
55
55 V
V
± 20 V
± 30 V
440
160
1200
A
A
A
200 A
1.5 J
1000
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13 / 10
Nm/lb.in.
6g
4g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 100A, Notes 1 & 2
Characteristic Values
Min. Typ. Max.
55 V
2.0 4.0 V
±200 nA
10 μA
750 μA
1.8 mΩ
G DS
D (Tab)
TO-268 (IXTT)
G
S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z International Standard Packages
z 175°C Operating Temperature
z High Current Handling Capability
z Avalanche Rated
z Fast Intrinsic Diode
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC/DC Converters and Off-line UPS
z Primary- Side Switch
z High Current Switching Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100220(12/09)
http://www.Datasheet4U.com

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