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PDF IXTH440N055T2 Data sheet ( Hoja de datos )
| Número de pieza | IXTH440N055T2 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
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Advance Technical Information
TrenchT2TM
Power MOSFET
IXTH440N055T2
IXTT440N055T2
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
VDSS =
ID25 =
RDS(on) ≤
55V
440A
1.8mΩ
TO-247 (IXTH)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
ILRMS
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
Tsold
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C (Chip Capability)
Lead Current Limit, RMS
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
Maximum Ratings
55
55 V
V
± 20 V
± 30 V
440
160
1200
A
A
A
200 A
1.5 J
1000
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13 / 10
Nm/lb.in.
6g
4g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 100A, Notes 1 & 2
Characteristic Values
Min. Typ. Max.
55 V
2.0 4.0 V
±200 nA
10 μA
750 μA
1.8 mΩ
G DS
D (Tab)
TO-268 (IXTT)
G
S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z International Standard Packages
z 175°C Operating Temperature
z High Current Handling Capability
z Avalanche Rated
z Fast Intrinsic Diode
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC/DC Converters and Off-line UPS
z Primary- Side Switch
z High Current Switching Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100220(12/09)
http://www.Datasheet4U.com
1 page  
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
70
RG = 1Ω , VGS = 10V
60 VDS = 27.5V
100A < I D < 200A
50
40
30
20
10
0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
400
350 t r
td(on) - - - -
TJ = 125ºC, VGS = 10V
300 VDS = 27.5V
I D = 200A
250
90
80
70
60
200 50
150
I D = 100A
40
100 30
50 20
0
1 2 3 4 5 6 78
RG - Ohms
10
9 10
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
80 140
t f td(off) - - - -
70
RG = 1Ω, VGS = 10V
120
VDS = 27.5V
60
TJ = 25ºC, 125ºC
50
100
80
40 60
30 40
40 60 80 100 120 140 160 180 200
ID - Amperes
IXTH440N055T2
IXTT440N055T2
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
70
RG = 1Ω , VGS = 10V
60 VDS = 27.5V
50
TJ = 125ºC
40
30
TJ = 25ºC
20
10
40 60 80 100 120 140 160 180 200
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
90
t f td(off) - - - -
80 RG = 1Ω, VGS = 10V
VDS = 27.5V
70
120
110
100
60
I D = 100A
50
I D = 200A
90
80
40 70
30 60
20 50
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
800
700 t f
td(off) - - - -
TJ = 125ºC, VGS = 10V
600 VDS = 27.5V
I D = 200A
500
400 I D = 100A
300
200
100
0
12
34 56 78
RG - Ohms
9
450
400
350
300
250
200
150
100
50
10
© 2009 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXTH440N055T2.PDF ] | |
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