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PDF IRF3707Z Data sheet ( Hoja de datos )
| Número de pieza | IRF3707Z | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF3707Z (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
PD - 95812A
IRF3707Z
IRF3707ZS
IRF3707ZL
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
30V 9.5m: 9.7nC
Benefits
l Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF3707Z
D2Pak
IRF3707ZS
TO-262
IRF3707ZL
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
gContinuous Drain Current, VGS @ 10V
gContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
eCase-to-Sink, Flat Greased Surface
eÃJunction-to-Ambient
hJunction-to-Ambient (PCB Mount)
Notes through are on page 12
www.irf.com
Max.
30
± 20
59i
42i
230
57
28
0.38
-55 to + 175
300 (1.6mm from case)
x x10 lbf in (1.1 N m)
Typ.
–––
0.50
–––
–––
Max.
2.653
–––
62
40
Units
V
A
W
W/°C
°C
Units
°C/W
1
12/4/03
http://www.Datasheet4U.com
1 page  
IRF3707Z/S/L
60
50 Limited By Package
40
30
20
10
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs.
Case Temperature
2.5
2.0
ID = 250µA
1.5
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
10
1 D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτ=i/τRi/iRi
R2R2
τ2 τ2
R3R3 Ri (°C/W) τi (sec)
τCτ 1.163 0.000257
τ3τ3 1.073 0.001040
0.419 0.003089
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page 
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IRF3707Z/S/L
TO-262 Part Marking Information
www.irf.com
IGBT
1- GATE
2- COLLEC-
TOR
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IRF3707Z.PDF ] | |
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