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PDF AP60L02GJ Data sheet ( Hoja de datos )
| Número de pieza | AP60L02GJ | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
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Advanced Power
Electronics Corp.
AP60L02GH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching
G
D
S
Description
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP60L02GJ) is available for low-profile applications.
BVDSS
RDS(ON)
ID
25V
12mΩ
50A
G D S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-case
Thermal Resistance Junction-case
Rthj-amb
Thermal Resistance Junction-ambient
G
D
S
Rating
25
± 20
50
32
180
62.5
0.5
-55 to 150
-55 to 150
TO-251(J)
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Max.
Value
2.0
110
Unit
℃/W
℃/W
Data & specifications subject to change without notice
200227032
http://www.Datasheet4U.com
1 page  
AP60L02GH/J
16
I D =25A
14
12
10
V DS =12V
V DS =16V
V DS =20V
8
6
4
2
0
0 102 0 304 05
Q G , Total Gate Charge (nC)
0
Fig 9. Gate Charge Characteristics
10000 f=1.0MHz
1000
Ciss
Coss
Crss
100
1
6 11 16 21
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10 T j =150 o C
1
T j =25 o C
3
2
1
0.1
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
0
-50
0
50 100 150
T j , Junction Temperature( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP60L02GJ.PDF ] | |
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