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MC33076のメーカーはON Semiconductorです、この部品の機能は「Low Noise Bipolar Operational Amplifier」です。 |
部品番号 | MC33076 |
| |
部品説明 | Low Noise Bipolar Operational Amplifier | ||
メーカ | ON Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとMC33076ダウンロード(pdfファイル)リンクがあります。 Total 10 pages
MC33076
Dual High Output Current,
Low Power, Low Noise
Bipolar Operational Amplifier
The MC33076 operational amplifier employs bipolar technology
with innovative high performance concepts for audio and industrial
applications. This device uses high frequency PNP input transistors to
improve frequency response. In addition, the amplifier provides high
output current drive capability while minimizing the drain
current. The all NPN output stage exhibits no deadband crossover
distortion, large output voltage swing, excellent phase and gain
margins, low open loop high frequency output impedance and
symmetrical source and sink AC frequency performance.
The MC33076 is tested over the automotive temperature range and
is available in an 8−pin SOIC package (D suffix) and in the standard
8 pin DIP package for high power applications.
• 100 Ω Output Drive Capability
• Large Output Voltage Swing
• Low Total Harmonic Distortion
• High Gain Bandwidth: 7.4 MHz
• High Slew Rate: 2.6 V/μs
• Dual Supply Operation: ±2.0 V to ±18 V
• High Output Current: ISC = 250 mA typ
• Similar Performance to MC33178
8
1
8
1
http://onsemi.com
PDIP−8
P1 SUFFIX
CASE 626
SO−8
D SUFFIX
CASE 751
MARKING
DIAGRAMS
8
MC33076P1
AWL
YYWW
1
8
33076
ALYW
1
A
WL, L
YY, Y
WW, W
= Assembly Location
= Wafer Lot
= Year
= Work Week
VCC PIN CONNECTIONS
Iref
Iref
Output 1 1
Inputs 1
2
3
−
+
1
VEE 4
8 VCC
7 Output 2
2
−
+
6
5
Inputs 2
(8 Pin Pkg, Top View)
Vin− Vin+ CC
Vout ORDERING INFORMATION
CM
Device
Package
Shipping
MC33076D
SO−8
98 Units/Rail
MC33076DR2
SO−8
2500 Tape & Reel
VEE
Figure 1. Equivalent Circuit Schematic
(Each Amplifier)
MC33076P1
PDIP−8
50 Units/Rail
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 2
1
Publication Order Number:
MC33076/D
1 Page MC33076
DC ELECTRICAL CHARACTERICISTICS (VCC = +15 V, VEE = −15 V, TA = 25°C, unless otherwise noted.)
Characteristics
Figure Symbol
Min
Typ
Output Short Circuit Current (VID = ±1.0 V Output to Gnd)
(VCC = +15 V, VEE = −15 V)
Source
Sink
(VCC = +2.5 V, VEE = −2.5 V)
Source
Sink
13, 14
ISC
190 +250
− −280
63 +94
− −80
Power Supply Current per Amplifier (VO = 0 V)
(VS = ±2.5 V to ±15 V)
TA = +25°C
TA = −40° to +85°C
15 ID
− 2.2
−−
Max
−
−215
−
−46
2.8
3.3
Unit
mA
mA
AC ELECTRICAL CHARACTERICISTICS (VCC = +15 V, VEE = −15 V, TA = 25°C, unless otherwise noted.)
Characteristics
Figure Symbol
Min
Typ
Slew Rate (Vin = −10 V to +10 V, RL = 100 Ω, CL = 100 pF, AV = 1.0)
Gain Bandwidth Product (f = 20 kHz)
16 SR 1.2 2.6
17 GBW 4.0 7.4
Unity Gain Bandwidth (Open Loop) (RL = 600 Ω, CL = 0 pF)
Gain Margin (RL = 600 Ω, CL = 0 pF)
Phase Margin (RL = 600 Ω, CL = 0 pF)
Channel Separation (f = 100 Hz to 20 kHz)
−
20, 21
20, 21
22
BW
Am
∅m
CS
− 3.5
− 15
− 52
− −120
Power Bandwidth (VO = 20 Vpp, RL = 600 Ω, THD ≤ 1%)
Total Harmonic Distortion (RL = 600 Ω, VO = 2.0 Vpp, AV = 1.0)
f = 1.0 kHz
f = 10 kHz
f = 20 kHz
− BWp
23 THD
− 32
− 0.0027
− 0.011
− 0.022
Open Loop Output Impedance (VO = 0 V, f = 2.5 MHz, AV = 10)
Differential Input Resistance (VCM = 0 V)
Differential Input Capacitance (VCM = 0 V)
Equivalent Input Noise Voltage (RS = 100 Ω)
f = 10 Hz
f = 1.0 kHz
24 |ZO|
− Rin
− Cin
25 en
− 75
− 200
− 10
− 7.5
− 5.0
Equivalent Input Noise Current
f = 10 Hz
f = 1.0 kHz
− in
− 0.33
− 0.15
Max
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
V/μs
MHz
MHz
dB
Deg
dB
kHz
%
Ω
kΩ
pF
nV/√Hz
pA/√Hz
http://onsemi.com
3
3Pages MC33076
320
300
Sink
280
260
240 Source
220 VCC = +15 V
VEE = −15 V
200
VID = ±1.0 V
RL < 10 Ω
180
−55
−25 5.0 35 65 95
TA, AMBIENT TEMPERATURE (°C)
Figure 14. Output Short Circuit Current
versus Temperature
125
5.0
4.0
3.0
2.0
1.0
0
0
TA = +125°C
TA = + 25°C
TA = − 55°C
3.0 6.0
9.0 12
15
VCC |VEE|, SUPPLY VOLTAGE (V)
Figure 15. Supply Current versus
Supply Voltage with No Load
18
3.0
2.5
2.0
1.5
1.0
0.5
VCC
VEE
=
=
+15
−15
V
V
ΔVin = 20 Vpp
0
−55 −25
5.0
ΔVin +−
100Ω
35 65
TA, AMBIENT TEMPERATURE (°C)
Figure 16. Slew Rate
versus Temperature
100pF
95
125
8.5
8.0
7.5
7.0
6.5
6.0
5.5
−55
VCC
VEE
=
=
+15
−15
V
V
f = 100 Hz
RL = 100 Ω
CL = 0 pF
−25 5.0 35 65
TA, AMBIENT TEMPERATURE (°C)
95
Figure 17. Gain Bandwidth Product
versus Temperature
125
50
1A
30
2A
10 2B 1B
−10
1A) Phase, VS = ±18 V
−30
2A) Phase, VS = ±1.5 V
1B) Gain, VS = ±18 V
2B) Gain, VS = ±1.5 V
−50
100 k
1.0 M
f, FREQUENCY (Hz)
10 M
Figure 18. Voltage Gain and Phase
versus Frequency
80
120
160
200
240
280
30 M
50 80
30 120
10 160
−10
1A) Phase, (R = 100 Ω)
−30
2A) Phase, (R = 100 Ω, C = 300 pF)
1B) Gain, (R = 100 Ω)
2B) Gain, (R = 100 Ω, C = 300 pF)
−50
100 k
1.0 M
f, FREQEUNCY (Hz)
1B 1A 200
2B
2A
10 M
240
280
30 M
Figure 19. Voltage Gain and Phase
versus Frequency
http://onsemi.com
6
6 Page | |||
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