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PDF IXTQ50N25T Data sheet ( Hoja de datos )
| Número de pieza | IXTQ50N25T | |
| Descripción | Trench Gate Power MOSFET | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Preliminary Technical Information
Trench Gate
Power MOSFET
IXTA50N25T IXTH50N25T
IXTP50N25T IXTQ50N25T
N-Channel Enhancement Mode
VDSS =
ID25 =
RDS(on) ≤
250V
50A
50mΩ
TO-263 (IXTA)
TO-247 (IXTH)
TO-220 (IXTP)
Symbol
VDSS
VDGR
VGSM
ID25
IDM
IAS
EAS
PD
TJ
TJM
Tstg
TL
FMCd
Weight
GS
(TAB)
G
DS
(TAB)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Transient
Maximum Ratings
250
250
± 30
V
V
V
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
50
130
5
1.5
400
-55 ... +150
150
-55 ... +150
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
300
260
Mounting Torque TO-220,TO-3P,TO247
1.13 / 10
Mounting Force TO-263
10..65 / 2.2..14.6
A
A
A
J
W
°C
°C
°C
°C
°C
Nmlb.in.
N/lb.
TO-263
TO-220
TO-3P
TO-247
2.5 g
3.0 g
5.5 g
6.0 g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ . Max.
250
35
V
V
± 100 nA
1 μA
150 μA
50 mΩ
GDS
TO-3P (IXTQ)
(TAB)
G
DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Avalanche rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
z Uninterruptible power supplies
z High speed power switching
applications
© 2007 IXYS CORPORATION, All rights reserved
Downloaded from Elcodis.com electronic components distributor
DS99346A(10/07)
http://www.Datasheet4U.com
1 page  
IXTA50N25T IXTH50N25T
IXTP50N25T IXTQ50N25T
100
90
80
70
60
50
40
30
20
10
0
3.6
Fig. 7. Input Admittance
TJ = 125ºC
25ºC
- 40ºC
4 4.4 4.8 5.2 5.6 6
VGS - Volts
6.4
180
160
140
120
100
80
60
40
20
0
0.4
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
TJ = 125ºC
TJ = 25ºC
0.5 0.6 0.7 0.8 0.9 1 1.1
VSD - Volts
1.2
10,000
1,000
Fig. 11. Capacitance
f = 1 MHz
Ciss
100
10
0
Coss
Crss
5 10 15 20 25 30 35 40
VDS - Volts
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 8. Transconductance
TJ = - 40ºC
25ºC
125ºC
10 20 30 40 50 60 70 80 90 100
ID - Amperes
Fig. 10. Gate Charge
10
9 VDS = 125V
8 I D = 25A
I G = 10mA
7
6
5
4
3
2
1
0
0 10 20 30 40 50 60 70 80
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Im pedance
1.00
0.10
0.01
0.00001 0.0001 0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2007 IXYS CORPORATION, All rights reserved
Downloaded from Elcodis.com electronic components distributor
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXTQ50N25T.PDF ] | |
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