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IXTH50N25T PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTH50N25T
部品説明 Trench Gate Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTH50N25T Datasheet, IXTH50N25T PDF,ピン配置, 機能
Preliminary Technical Information
Trench Gate
Power MOSFET
IXTA50N25T IXTH50N25T
IXTP50N25T IXTQ50N25T
N-Channel Enhancement Mode
VDSS =
ID25 =
RDS(on)
250V
50A
50mΩ
TO-263 (IXTA)
TO-247 (IXTH)
TO-220 (IXTP)
Symbol
VDSS
VDGR
VGSM
ID25
IDM
IAS
EAS
PD
TJ
TJM
Tstg
TL
FMCd
Weight
GS
(TAB)
G
DS
(TAB)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Transient
Maximum Ratings
250
250
± 30
V
V
V
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
50
130
5
1.5
400
-55 ... +150
150
-55 ... +150
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
300
260
Mounting Torque TO-220,TO-3P,TO247
1.13 / 10
Mounting Force TO-263
10..65 / 2.2..14.6
A
A
A
J
W
°C
°C
°C
°C
°C
Nmlb.in.
N/lb.
TO-263
TO-220
TO-3P
TO-247
2.5 g
3.0 g
5.5 g
6.0 g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ . Max.
250
35
V
V
± 100 nA
1 μA
150 μA
50 mΩ
GDS
TO-3P (IXTQ)
(TAB)
G
DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Avalanche rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
z Uninterruptible power supplies
z High speed power switching
applications
© 2007 IXYS CORPORATION, All rights reserved
Downloaded from Elcodis.com electronic components distributor
DS99346A(10/07)
http://www.Datasheet4U.com

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