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GKI04048 の電気的特性と機能

GKI04048のメーカーはSANKENです、この部品の機能は「N Channel Trench Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 GKI04048
部品説明 N Channel Trench Power MOSFET
メーカ SANKEN
ロゴ SANKEN ロゴ 




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GKI04048 Datasheet, GKI04048 PDF,ピン配置, 機能
40 V, 26 A, 4.2 mΩ Low RDS(ON)
N ch Trench Power MOSFET
GKI04048
Features
V(BR)DSS --------------------------------- 40 V (ID = 100 µA)
ID ---------------------------------------------------------- 26 A
RDS(ON) ----------5.4 mΩ max. (VGS = 10 V, ID = 35.4 A)
Qg------16.0 nC (VGS = 4.5 V, VDS = 20 V, ID = 42.8 A)
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Applications
DC-DC converters
Synchronous Rectification
Power Supplies
Package
DFN 5 × 6 (L)
8pin
DDDD
8pin
DDDD
SSSG
1pin
GSSS
1pin
Not to scale
Equivalent circuit
D(5)(6)(7)(8)
G(4)
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Test conditions
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Single Pulse Avalanche Energy
Avalanche Current
Power Dissipation
Operating Junction Temperature
VDS
VGS
TC = 25 °C,
ID
with infinite heatsink
TA = 25 °C,
mounted on PCB*
IDM
PW 100µs
Duty cycle 1 %
IS
ISM
PW 100µs
Duty cycle 1 %
VDD = 20V, L = 1 mH,
EAS
IAS = 9.4 A, unclamped,
RG = 4.7 Ω,
Refer to Figure 1
IAS
TC = 25 °C,
PD
with infinite heatsink
TA = 25 °C,
mounted on PCB*
TJ
Storage Temperature Range
TSTG
* 1 inch square 2 oz copper pad on 1.5 × 1.5 inch PCB.
S(1)(2)(3)
Rating
40
± 20
26
14
51
26
51
89
16.7
59
3.1
150
55 to 150
GKI04048-DS Rev.1.6
Mar. 30, 2015
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp
Unit
V
V
A
A
A
A
A
mJ
A
W
W
°C
°C
1

1 Page





GKI04048 pdf, ピン配列
GKI04048
Test Circuits and Waveforms
VGS
RG
0V
L
ID
VDS
E AS
1
2
L IAS2
V(BR)DSS
V(BR)DSS VDD
VDD
VDS
ID
IAS
(a) Test Circuit
Figure 1 Unclamped Inductive Switching
(b) Waveform
V(BR)DSS
VDD
RL
RG
VGS
0V
P.W. = 10 μs
Duty cycle 1 %
VDS
VDD
VGS
VDS
td(on) tr
ton
(a) Test Circuit
Figure 2 Switching Time
td(off) tf
toff
(b) Waveform
90%
10%
90%
10%
VGS
0V
D.U.T.
RG
IF L
VDD
IF
0V
di/dt
trr
IRM × 90 %
IRM
(a) Test Circuit
Figure 3 Diode Reverse Recovery Time
(b) Waveform
GKI04048-DS Rev.1.6
Mar. 30, 2015
SANKEN ELECTRIC CO.,LTD.
3


3Pages


GKI04048 電子部品, 半導体
GKI04048
Package Outline
DFN 5 × 6 (L)
NOTES:
1) Dimension is in millimeters
2) Pb-free. Device composition compliant with the RoHS directive
Marking Diagram
SK
GKI×××××
YMDDXXXB
Part Number
Lot Number
Y is the Last digit of the year (0 to 9)
M is the Month (1 to 9, O, N or D)
DD is the Date (two digit of 01 to 31)
XXX is the suffix No.
B expresses Pb free pins
GKI04048-DS Rev.1.6
Mar. 30, 2015
SANKEN ELECTRIC CO.,LTD.
6

6 Page



ページ 合計 : 8 ページ
 
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部品番号部品説明メーカ
GKI04048

N Channel Trench Power MOSFET

SANKEN
SANKEN


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