DataSheet.jp

P25NM60N の電気的特性と機能

P25NM60NのメーカーはSTMicroelectronicsです、この部品の機能は「N-CHANNEL MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 P25NM60N
部品説明 N-CHANNEL MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




このページの下部にプレビューとP25NM60Nダウンロード(pdfファイル)リンクがあります。

Total 12 pages

No Preview Available !

P25NM60N Datasheet, P25NM60N PDF,ピン配置, 機能
STP25NM60N - STF25NM60N
STB25NM60N/-1 - STW25NM60N
N-CHANNEL 600V 0.140-20A TO-220/FP/D²/I²PAK/TO-247
SECOND GENERATION MDmesh™ MOSFET
Table 1: General Features
TYPE
VDSS
(@Tjmax)
RDS(on)
ID
STB25NM60N-1
STF25NM60N
STP25NM60N
STW25NM60N
STB25NM60N
650 V
650 V
650 V
650 V
650 V
< 0.170
< 0.170
< 0.170
< 0.170
< 0.170
20 A
20(*) A
20 A
20 A
20 A
s WORLD’S LOWEST ON RESISTANCE
s TYPICAL RDS(on) = 0.140
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s 100% AVALANCHE TESTED
s LOW INPUT CAPACITANCE AND GATE
CHARGE
s LOW GATE INPUT RESISTANCE
Figure 1: Package
PRODUCT PREVIEW
3
2
1
TO-220
123
I²PAK
3
1
D²PAK
3
2
1
TO-220FP
3
2
1
TO-247
DESCRIPTION
The STP25NM60N is realized with the second
generation of MDmesh Technology. This revolu-
tionary MOSFET associates a new vertical struc-
ture to the Company's strip layout to yield the
world's lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high ef-
ficiency converters
Figure 2: Internal Schematic Diagram
APPLICATIONS
The MDmesh™ II family is very suitable for in-
crease the power density of high voltage convert-
ers allowing system miniaturization and higher
efficiencies.
Table 2: Order Code
SALES TYPE
STB25NM60N-1
STF25NM60N
STP25NM60N
STW25NM60N
STB25NM60N
MARKING
B25NM60N
F25NM60N
P25NM60N
W25NM60N
B25NM60N
PACKAGE
I²PAK
TO-220FP
TO-220
TO-247
D²PAK
PACKAGING
TUBE
TUBE
TUBE
TUBE
TAPE & REEL
Rev. 4
June 2005
This is preliminary information on a new product now in development. Details are subject to change without notice.
1/12
Free Datasheet http://www.Datasheet4U.com

1 Page





P25NM60N pdf, ピン配列
STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
Parameter
Test Conditions
gfs (1) Forward Transconductance VDS = 15V , ID= 10A
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
COSS eq (3). Equivalent Output
Capacitance
VGS = 0 V, VDS = 0 to 480 V
RG Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
VDD = 300 V, ID = 10 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 4)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 480 V, ID = 20 A,
VGS = 10 V
(see Figure 7)
Min.
Typ.
17
2565
511
77
TBD
2
TBD
TBD
TBD
TBD
93
TBD
TBD
Max.
Unit
S
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Table 8: Source Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
20 A
80 A
VSD (1) Forward On Voltage
ISD = 20 A, VGS = 0
1.3 V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 25 A, di/dt = 100 A/µs
VDD = 100V
(see Figure 5)
TBD
TBD
TBD
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 25 A, di/dt = 100 A/µs
VDD = 100V, Tj = 150°C
(see Figure 5)
TBD
TBD
TBD
ns
µC
A
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
3/12
Free Datasheet http://www.Datasheet4U.com


3Pages


P25NM60N 電子部品, 半導体
STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N
DIM.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Ø
MIN.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
2.9
15.9
9
3
TO-220FP MECHANICAL DATA
mm.
TYP
16
MAX.
4.6
2.7
2.75
0.7
1
1.7
1.7
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
1.126
.0385
0.114
0.626
0.354
0.118
inch
TYP.
0.630
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
1.204
0.417
0.141
0.645
0.366
0.126
L3
L6
L7
L2 L5
123
L4
6/12
Free Datasheet http://www.Datasheet4U.com

6 Page



ページ 合計 : 12 ページ
 
PDF
ダウンロード
[ P25NM60N データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
P25NM60N

N-CHANNEL MOSFET

STMicroelectronics
STMicroelectronics


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap