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A1177 の電気的特性と機能

A1177のメーカーはSanyo Semicon Deviceです、この部品の機能は「PNP Transistor - 2SA1177」です。


製品の詳細 ( Datasheet PDF )

部品番号 A1177
部品説明 PNP Transistor - 2SA1177
メーカ Sanyo Semicon Device
ロゴ Sanyo Semicon Device ロゴ 




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A1177 Datasheet, A1177 PDF,ピン配置, 機能
Ordering number:ENN851H
PNP Epitaxial Planar Silicon Transistor
2SA1177
HF Amp Applications
Use
· Ideally suited for use in FM RF amplifiers, mixers,
oscillators, converters, IF amplifiers.
Features
· High fT (230MHz typ.) and small Cre (1.1 pF typ.).
· Small NF (2.5dB typ.).
Package Dimensions
unit:mm
2033A
4.0 [2SA1177] 2.2
0.4
0.5
0.4
0.4
123
1.3 1.3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=–10V, IE=0
Emitter Cutoff Current
IEBO VEB=–4A, IC=0
DC Current Gain
hFE VCE=–6V, IC=–1mA
Gain-Bandwidth Product
fT VCE=–6V, IC=–1mA
Feedback Capacitance
Cre VCB=–6V, f=1MHz
Base-to-Collector Time Constant
rbb, cc VCB=–6V, IC=–1mA, f=31.9MHz
Noise Figure
NF VCE=–6V, IC=–1mA, f=100MHz
Power Gain
PG VCE=–6V, IC=–1mA, f=100MHz
* : 2SA1177 is classified as follows according to hFE at 1mA.
Rank
D
E
F
hFE 60 to 120 100 to 200 160 to 320
3.0
3.8
1 : Emitter
2 : Collector
3 : Base
SANYO : SPA
Ratings
–30
–20
–5
–30
150
125
–55 to +125
Unit
V
V
V
mA
mW
˚C
˚C
Ratings
min typ
60*
150 230
1.1
11
2.5
22
max
–0.1
–0.1
320*
1.7
20
Unit
µA
µA
MHz
pF
ps
dB
dB
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70502TN (KT)/71598HA (KT)/3187AT,/3075KI/1313/8182/2172KI, TS No.851-1/5
Free Datasheet http://www.Datasheet4U.com

1 Page





A1177 pdf, ピン配列
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
--0.1
2
1.0
7
5
3
2
0.1
7
5
3
25
5
3
2
1.0
7
5
3
2
VCE(sat) -- IC
2SA1177
200
PC -- Ta
160
150
120
5 80
40
2 3 5 7 --1.0 2 3 5 7 --10
Collector Current, IC – mA
23 5
ITR02974
Input Admittance yie -- IC
2
f=1.0MHz
VCE=--6V
100
c ie
gie
7
5
3
2
10
7
5
3
7 --1.0
23
5
Collector Current, IC – mA
7
2
--10
ITR02976
Input Admittance yie -- IC
5
f=10MHz
VCE=--6V 3
2
g ie
c ie
100
7
5
3
2
0
0 20 40 60 80 100 120 140
Ambient Temperature, Ta – ˚C ITR02975
Output Admittance yoe -- IC
55
f=1.0MHz
3 VCE=--6V 3
22
g oe
10 10
77
55
3 c oe 3
22
1.0
5
7 --1.0
23
5
Collector Current, IC – mA
1.0
7 --10
ITR02977
100 Output Admittance yoe -- IC 100
7 f=10MHz
5 VCE=--6V
7
5
3
2 g oe
3
2
10 10
77
55
33
2 coe 2
0.1
5
7 --1.0
23
10
5 7 --10
Collector Current, IC – mA
ITR02978
Input Admittance yie -- IC
100 100
f=100MHz
7 VCE=--6V 7
55
3
c ie
2
3
2
10 10
7 g ie 7
55
33
22
1.0
5
7 --1.0
23
1.0
5 7 --10
Collector Current, IC – mA
ITR02979
Output Admittance yoe -- IC
55
f=100MHz
3 VCE=--6V 3
coe
22
1.0 1.0
77
5 goe 5
33
22
1.0 3
5 7 --1.0
23
5
7
1.0
--10
Collector Current, IC – mA
ITR02980
0.1 3
5 7 --1.0
23
5
7
0.1
--10
Collector Current, IC – mA
ITR02981
No.851-3/5
Free Datasheet http://www.Datas


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