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PDF A821 Data sheet ( Hoja de datos )
| Número de pieza | A821 | |
| Descripción | PNP Plastic Encapsulated Transistor | |
| Fabricantes | Secos | |
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Elektronische Bauelemente
2SA821
-0.03A , -210 V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Breakdown Voltage
Low Transition Frequency
CLASSIFICATION OF hFE
Product-Rank 2SA821-N 2SA821-P
Range
56~120
82~180
2SA821-Q
82~180
GH
J
AD
B
K
E CF
TO-92
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Base
Collector
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
-210
-210
-5
-30
250
500
150, -55~150
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test condition
Collector to Base Breakdown Voltage
V(BR)CBO
-210
-
-
V IC= -0.05mA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO -210
-
-
V IC= -0.1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
-5
-
-
V IE= -0.05mA, IC=0
Collector Cut-Off Current
ICBO - - -1 μA VCB= -150V, IE=0
Emitter Cut-Off Current
IEBO - - -1 μA VEB= -4.5V, IC=0
DC Current Gain
hFE 56 - 270
VCE= -3V, IC= -5mA
Collector to Emitter Saturation Voltage
VCE(sat)
-
- -0.6 V IC= -2mA, IB= -0.2mA
Transition Frequency
fT - 50 - MHz VCE= -5V, IC= -2mA
Collector Output Capacitance
Cob - 8 - pF VCB= -10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
14-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
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