DataSheet.jp

2SA821S PDF Data sheet ( 特性 )

部品番号 2SA821S
部品説明 PNP Transistor
メーカ JIANGSU CHANGJIANG
ロゴ JIANGSU CHANGJIANG ロゴ 


Total 1 pages
		

No Preview Available !

2SA821S Datasheet, 2SA821S PDF,ピン配置, 機能
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
2SA821S TRANSISTOR (PNP)
FEATURES
z High Breakdown Voltage
TO – 92S
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-210
-210
-5
-0.03
250
500
150
-55~+150
Unit
V
V
V
A
mW
/W
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC= -0.05mA,IE=0
-210
V
V(BR)CEO IC=-0.1mA,IB=0
-210
V
V(BR)EBO IE=-0.05mA,IC=0
-5
V
ICBO VCB=-150V,IE=0
-1 μA
IEBO VEB=-4.5V,IC=0
-1 μA
hFE VCE=-3V, IC=-5mA
56
270
VCE(sat)
IC=-2mA,IB=-0.2mA
-0.6 V
Cob VCB=-10V,IE=0, f=1MHz
8
pF
fT VCE=-5V,IC=-2mA
50 MHz
CLASSIFICATION OF hFE
RANK
RANGE
N
56-120
P
82-180
Q
120-270
A,Dec,2010
Free Datasheet http://www.Datasheet4U.com

1 Page




ページ 合計 : 1 ページ
PDF
ダウンロード
[ 2SA821S.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
2SA821

PNP Plastic Encapsulated Transistor

Secos
Secos
2SA821

PNP Transistor

JIANGSU CHANGJIANG
JIANGSU CHANGJIANG
2SA821S

HIGH VOLTAGE AMPLIFIER TRANSISTOR

Rohm
Rohm
2SA821S

PNP Transistor

WEJ
WEJ

www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap