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RMLV0408EGSB-5S2 の電気的特性と機能

RMLV0408EGSB-5S2のメーカーはRenesasです、この部品の機能は「4Mb Advanced LPSRAM (512k word x 8bit)」です。


製品の詳細 ( Datasheet PDF )

部品番号 RMLV0408EGSB-5S2
部品説明 4Mb Advanced LPSRAM (512k word x 8bit)
メーカ Renesas
ロゴ Renesas ロゴ 




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RMLV0408EGSB-5S2 Datasheet, RMLV0408EGSB-5S2 PDF,ピン配置, 機能
RMLV0408E Series
4Mb Advanced LPSRAM (512k word × 8bit)
Preliminary
R10DS0217EJ0001
Rev.0.01
2013.09.10
Description
The RMLV0408E Series is a family of 4-Mbit static RAMs organized 524,288-word × 8-bit, fabricated by Renesas’s
high-performance Advanced LPSRAM technologies. The RMLV0408E Series has realized higher density, higher
performance and low power consumption. The RMLV0408E Series offers low power standby power dissipation;
therefore, it is suitable for battery backup systems. It is offered in 32-pin SOP, 32-pin TSOP II or 32-pin STSOP.
Features
Single 3V supply: 2.7V to 3.6V
Access time: 45/55ns (max.)
Current consumption:
── Standby: 0.4µA (typ.)
Equal access and cycle times
Common data input and output
── Three state output
Directly TTL compatible
── All inputs and outputs
Battery backup operation
Part Name Information
Part Name
RMLV0408EGSP-4S2
Access
time
45 ns
RMLV0408EGSP-5S2
55 ns
RMLV0408EGSB-4S2
45 ns
RMLV0408EGSB-5S2
55 ns
RMLV0408EGSA-4S2
RMLV0408EGSA-5S2
45 ns
55 ns
Temperature
Range
-40 ~ +85°C
Package
525-mil 32-pin plastic SOP
400-mil 32-pin plastic TSOP II
8mm x 13.4mm STSOP
R10DS0217EJ0001 Rev.0.01
2013.09.10
Page 1 of 10
Free Datasheet http://www.Datasheet4U.com

1 Page





RMLV0408EGSB-5S2 pdf, ピン配列
RMLV0408E Series
Block Diagram
A0
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
I/O0
I/O7
CS#
WE#
OE#
Row
Decoder
・・・・・
Memory Matrix
2,048 x 2,048
Preliminary
VCC
VSS
Input
Data
Control
・・
Column I/O
Column Decoder
・・
A1 A2 A3 A14 A15 A16 A17 A18
・・
Timing Pulse Generator
Read/Write Control
Operation Table
CS# WE# OE#
I/O0 to I/O7
HXX
High-Z
LHL
Dout
LLX
Din
L HH
High-Z
Note 1. H: VIH L:VIL X: VIH or VIL
Operation
Standby
Read
Write
Output disable
R10DS0217EJ0001 Rev.0.01
2013.09.10
Page 3 of 10
Free Datasheet http://www.Datasheet4U.com


3Pages


RMLV0408EGSB-5S2 電子部品, 半導体
RMLV0408E Series
Timing Waveforms
Read Cycle
Preliminary
A0~18
CS#
WE#
VIH
WE# = “H” level
OE#
I/O0~7
tRC
Valid address
tAA
tACS
t *12,13
CLZ
t *11,12,13
CHZ
tOE
tOLZ *12,13
High impedance
t *11,12,13
OHZ
tOH
Valid Data
Note
11. tCHZ and tOHZ are defined as the time when the I/O pins enter a high-impedance state and are not referred to
the I/O levels.
12. This parameter is sampled and not 100% tested.
13. At any given temperature and voltage condition, tCHZ max is less than tCLZ min, and tOHZ max is less than tOLZ
min, for any device.
R10DS0217EJ0001 Rev.0.01
2013.09.10
Page 6 of 10
Free Datasheet http://www.Datasheet4U.com

6 Page



ページ 合計 : 12 ページ
 
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部品番号部品説明メーカ
RMLV0408EGSB-5S2

4Mb Advanced LPSRAM (512k word x 8bit)

Renesas
Renesas


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