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IRF7317PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRF7317PBF |
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部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7317PBFダウンロード(pdfファイル)リンクがあります。 Total 10 pages
PD - 95296
IRF7317PbF
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
N-CHANNEL MOSFET
S1 1
8 D1
N-Ch P-Ch
l Dual N and P Channel MOSFET
l Surface Mount
l Fully Avalanche Rated
G1 2
S2 3
7 D1
VDSS 20V -20V
6 D2
l Lead-Free
Description
G2 4
5 D2
P-CHANNEL MOSFET
RDS(on) 0.029Ω 0.058Ω
Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Maximum
N-Channel P-Channel
Drain-Source Voltage
VDS
20
-20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current
TA = 25°C
TA = 70°C
6.6 -5.3
5.3 -4.3
Pulsed Drain Current
IDM 26
-21
Continuous Source Current (Diode Conduction)
IS 2.5
-2.5
Maximum Power Dissipation
TA = 25°C
TA = 70°C
2.0
1.3
Single Pulse Avalanche Energy
EAS 100
150
Avalanche Current
IAR 4.1
-2.9
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
EAR
dv/dt
0.20
5.0 -5.0
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150 °C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Symbol
RθJA
Limit
62.5
Units
A
W
mJ
A
mJ
V/ ns
Units
°C/W
5/25/04
Free Datasheet http://www.Datasheet4U.com
1 Page N-Channel
IRF7317PbF
100
VGS
TOP 7.50V
4.50V
4.00V
3.50V
3.00V
2.70V
2.00V
BOTTOM 1.50V
10
1.50V
20µs PULSE WIDTH
1 TJ= 25 °C
0.1 1 10
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
VGS
TOP 7.50V
4.50V
4.00V
3.50V
3.00V
2.70V
2.00V
BOTTOM 1.50V
10
1.50V
20µs PULSE WIDTH
1 TJ= 150 °C
0.1 1 10
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100 100
TJ = 25°C
TJ = 150° C
10
V DS = 10V
20µs PULSE WIDTH
1
1.5 2.0 2.5 3.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
TJ = 150° C
10
TJ = 25° C
1 VGS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD ,Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
Free Datasheet http://www.Datasheet4U.com
3Pages IRF7317PbF
100
10
VGS
TOP -7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
BOTTOM -1.50V
P-Channel
100
10
VGS
TOP -7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
BOTTOM -1.50V
1 -1.50V
0.1
0.1
20µs PULSE WIDTH
TJ = 25 °C
1
-VDS , Drain-to-Source Voltage (V)
10
Fig 12. Typical Output Characteristics
-1.50V
1
0.1
0.1
20µs PULSE WIDTH
TJ= 150 °C
1
-VDS , Drain-to-Source Voltage (V)
10
Fig 13. Typical Output Characteristics
100
TJ = 25° C
TJ = 150° C
10
V DS = -10V
20µs PULSE WIDTH
1
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
-VGS, Gate-to-Source Voltage (V)
Fig 14. Typical Transfer Characteristics
100
TJ = 150° C
10
TJ = 25° C
1
0.1
0.2
VGS = 0 V
0.4 0.6 0.8 1.0 1.2
-VSD ,Source-to-Drain Voltage (V)
1.4
Fig 15. Typical Source-Drain Diode
Forward Voltage
Free Datasheet http://www.Datasheet4U.com
6 Page | |||
ページ | 合計 : 10 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRF7317PBF | Power MOSFET ( Transistor ) | International Rectifier |