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Número de pieza | P20N06 | |
Descripción | CEP20N06 | |
Fabricantes | CET | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de P20N06 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! CEP20N06/CEB20N06
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 28A, RDS(ON) = 40mΩ @VGS = 10V.
RDS(ON) = 50mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
ID
IDM
28
20
112
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
50
0.4
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Units
V
V
A
A
A
W
W/ C
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice .
Symbol
RθJC
RθJA
1
Limit
3
50
Units
C/W
C/W
Rev 1. 2010.Dec
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1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet P20N06.PDF ] |
Número de pieza | Descripción | Fabricantes |
P20N06 | CEP20N06 | CET |
P20N06 | FQP20N06 | Freescale |
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