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20N50 の電気的特性と機能

20N50のメーカーはFairchild Semiconductorです、この部品の機能は「FDP20N50」です。


製品の詳細 ( Datasheet PDF )

部品番号 20N50
部品説明 FDP20N50
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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20N50 Datasheet, 20N50 PDF,ピン配置, 機能
www.DataSheet4U.com
FDP20N50
500V N-Channel MOSFET
Features
• 20A, 500V, RDS(on) = 0.23Ω @VGS = 10 V
• Low gate charge ( typical 45.6 nC)
• Low Crss ( typical 27 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
May 2006
UniFETTM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
VGSS
EAS
IAR
EAR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction termperature.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
©2006 Fairchild Semiconductor Corporation
FDP20N50 Rev. A1
1
G
S
FDP20N50
500
20
12.9
80
± 30
1110
20
25.0
4.5
250
2.0
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Min.
--
0.5
--
Max.
0.5
--
62.5
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com
http://www.Datasheet4U.com

1 Page





20N50 pdf, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
101 Bottom : 5.5 V
100
10-1
Notes :
1. 250s Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.8
0.6
VGS = 10V
0.4
VGS = 20V
0.2
Note : TJ = 25
0.0
0
15 30 45 60 75 90
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
6000
5000
4000
3000
2000
1000
0
10-1
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
* Note :
1. VGS = 0 V
Crss 2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
102
150oC
101 25oC
-55oC
100
2
Notes :
1. VDS = 40V
2. 250s Pulse Test
4 6 8 10
VGS, Gate-Source Voltage [V]
12
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
101
150
25
Notes :
1. VGS = 0V
2. 250s Pulse Test
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
VDS = 100V
10 VDS = 250V
VDS = 400V
8
6
4
2
Note : ID = 20A
0
0 10 20 30 40 50
QG, Total Gate Charge [nC]
FDP20N50 Rev. A1
3 www.fairchildsemi.com
http://www.Datasheet4U.com


3Pages


20N50 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP20N50 Rev. A1
6 www.fairchildsemi.com
http://www.Datasheet4U.com

6 Page



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共有リンク

Link :


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