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PDF K2654-01 Data sheet ( Hoja de datos )
| Número de pieza | K2654-01 | |
| Descripción | MOSFET ( Transistor ) - 2SK2654-01 | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
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2SK2654-01
FAP-IIS Series
> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Repetitive Avalanche Rated
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum RatingsT( C=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V DS
900
Continous Drain Current
ID 8
Pulsed Drain Current
I D(puls)
32
Gate-Source-Voltage
V GS
±30
Repetitive or Non-Repetitive (Tch ≤ 150°C)
Avalanche Energy
I AR
E AS
8
241
Max. Power Dissipation
P D 150
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
N-channel MOS-FET
900V 2Ω 8A 150W
> Outline Drawing
> Equivalent Circuit
Unit
V
A
A
V
A
mJ
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS= VGS
Zero Gate Voltage Drain Current
I DSS
VDS=900V Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±30V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=4A
VGS=10V
Forward Transconductance
g fs ID=4A VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=600V
t r ID=8A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
Avalanche Capability
t f RGS=10 Ω
I AV L = 100µH Tch=25°C
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V T ch=25°C
Reverse Recovery Time
t rr IF=IDR VGS=0V
Reverse Recovery Charge
Q rr -dIF/dt=100A/µs T ch=25°C
Min.
900
3,5
8
Typ. Max.
4,0
10
0,2
10
1,48
5
1200
180
90
30
120
95
60
4,5
500
1,0
100
2,0
1,0
1000
12
Unit
V
V
µA
mA
nA
Ω
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
35 °C/W
0,83 °C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
http://www.Datasheet4U.com
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| PDF Descargar | [ Datasheet K2654-01.PDF ] | |
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