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PDF RU4099R Data sheet ( Hoja de datos )
| Número de pieza | RU4099R | |
| Descripción | N-Channel Advanced Power MOSFET | |
| Fabricantes | Ruichips | |
| Logotipo |  |
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RU4099R
N-Channel Advanced Power MOSFET
Features
· 40V/200A
RDS (ON)=2.8mΩ(Typ.) @ VGS=10V
·Avalanche Rated
· Reliable and Rugged
· Lead Free and Green Devices Available
Applications
·Automotive applications and a wide
variety of other applications
·High Efficiency Synchronous in SMPS
·High Speed Power Switching
Pin Description
TO-220
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300µs Pulsed Drain Current Tested
ID Continue Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance -Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy ,Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Rating
40
±25
175
-55 to 175
①
200
②
800
①
200
①
140
300
150
0.5
1400
Unit
V
°C
°C
A
A
W
°C/W
mJ
Copyright Ruichips Semiconductor Co., Ltd
Rev. C –NOV., 2012
www.ruichips.com
http://www.Datasheet4U.com
1 page  
Typical Characteristics
Drain-Source On Resistance
RU4099R
Source-Drain Diode Forward
Tj - Junction Temperature (°C)
Capacitance
VSD - Source-Drain Voltage (V)
Gate Charge
VDS - Drain-Source Voltage (V)
QG - Gate Charge (nC)
Copyright Ruichips Semiconductor Co., Ltd
Rev.C –NOV., 2012
5
www.ruichips.com
http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RU4099R.PDF ] | |
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