|
|
2SD2209のメーカーはPanasonicです、この部品の機能は「Silicon NPN triple diffusion planar type Darlington」です。 |
部品番号 | 2SD2209 |
| |
部品説明 | Silicon NPN triple diffusion planar type Darlington | ||
メーカ | Panasonic | ||
ロゴ | |||
このページの下部にプレビューと2SD2209ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
Power Transistors
2SD2209
Silicon NPN triple diffusion planar type Darlington
For power amplification and switching
7.0±0.3
3.0±0.2
Unit: mm
3.5±0.2
s Features
q I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Ratings
100±15
100±15
5
8
4
15
1.3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Symbol
ICBO
IEBO
VCEO
hFE1
hFE2*1
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Energy handling capability
VBE(sat)
fT
ton
tstg
tf
Es/b*2
Conditions
VCB = 85V, IE = 0
VEB = 5V, IC = 0
IC = 5mA, IB = 0
VCE = 3V, IC = 0.5A
VCE = 3V, IC = 3A
IC = 3A, IB = 12mA
IC = 5A, IB = 20mA
IC = 3A, IB = 12mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 3A, IB1 = 12mA, IB2 = –12mA,
VCC = 50V
IC = 1A, L = 100mH, RBE = 100Ω
1.1±0.1
0.75±0.1
0.85±0.1
0.4±0.1
2.3±0.2
4.6±0.4
123
7.0±0.3
2.0±0.2
3.0±0.2
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
3.5±0.2
0 to 0.15
1.1±0.1
0.75±0.1
123
2.3±0.2
4.6±0.4
2.5
0.5 max.
0.9±0.1
0 to 0.15
1:Base
2:Collector
3:Emitter
I Type Package (Y)
min
85
1000
1000
typ max Unit
100 µA
2 mA
115 V
10000
2
V
4
2.5 V
20 MHz
0.3 µs
3.0 µs
1.0 µs
50 mJ
*1hFE2 Rank classification
Rank
Q
P
hFE2 1000 to 5000 2000 to 10000
*2Es/b Test circuit
Vin
tW
T.U.T
IB1
IC
–IB2
L coil
VCC
Vclamp
Internal Connection
C
B
E
Downloaded from Elcodis.com electronic components distributor
1
http://www.Datasheet4U.com
1 Page Power Transistors
1000
100
10
Rth(t) — t
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
(2)
1
0.1
10–3
10–2
10–1
1 10
Time t (s)
102 103 104
2SD2209
Downloaded from Elcodis.com electronic components distributor
3
http://www.Datasheet4U.com
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ 2SD2209 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
2SD2200 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
2SD2201 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
2SD2202 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
2SD2203 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |