|
|
Datasheet D2209 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | D2209 | Torque Sensor Drehmomentsensor (statisch) Torque Sensor (static)
An beiden Seiten Flansch mit Zentrierabsatz
G 0.2%
Flange with fixing shoulder on both sides
D2209 1 - 5 Nm
TECHNISCHE DATEN - SPECIFICATIONS
Typ - Type Messbereich – Measuring range Genauigkeitsklasse - Accuracy class Nennkennwert (S) | TRANSMETRA | sensor |
2 | D2209 | NPN Transistor, 2SD2209 Power Transistors
2SD2209
Silicon NPN triple diffusion planar type Darlington
7.0±0.3 3.5±0.2
Unit: mm
For power amplification and switching
7.2±0.3 0.8±0.2
3.0±0.2
1.0±0.2
M Di ain sc te on na tin nc ue e/ d
q
I type package enabling direct soldering of the radiating fin to the printed | Panasonic | data |
D22 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | D220 | Diode (spec sheet) American Microsemiconductor diode | | |
2 | D2200 | NPN Transistor, 2SD2200 Ordering number:EN3151
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1451/2SD2200
80V/5A Switching Applications
Features
· Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1451/2SD2200-applied equipment. -High density surface mo Sanyo data | | |
3 | D2201 | METAL GATE RF SILICON FET TetraFET
D2201UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Seme LAB gate | | |
4 | D2201 | NPN Transistor, 2SD2201 Ordering number:EN3152
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1452/2SD2201
80V/7A Switching Applications
Features
· Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1452/2SD2201-applied equipment. -High density surface mo Sanyo data | | |
5 | D2201UK | METAL GATE RF SILICON FET TetraFET
D2201UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Seme LAB gate | | |
6 | D2202 | NPN Transistor, 2SD2202 Ordering number:EN3249
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1454/2SD2202
High-Current Switching Applications
Features
· Low collector-to-emitter saturation voltage. · Large current capacity. · Micaless package facilitating easy mounting.
Package Dimensions
unit:mm 2041A
[2SB1454/2SD Sanyo data | | |
7 | D2202UK | METAL GATE RF SILICON FET TetraFET
D2202UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 12.5V – 1GHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Cr Seme LAB gate | |
Esta página es del resultado de búsqueda del D2209. Si pulsa el resultado de búsqueda de D2209 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |