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PHP12N50E の電気的特性と機能

PHP12N50EのメーカーはPhilipsです、この部品の機能は「PowerMOS transistors」です。


製品の詳細 ( Datasheet PDF )

部品番号 PHP12N50E
部品説明 PowerMOS transistors
メーカ Philips
ロゴ Philips ロゴ 




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PHP12N50E Datasheet, PHP12N50E PDF,ピン配置, 機能
Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHB11N50E, PHW11N50E
FEATURES
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
SYMBOL
g
d
s
QUICK REFERENCE DATA
VDSS = 500 V
ID = 10.9 A
RDS(ON) 0.55
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies,
T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching
applications.
The PHW11N50E is supplied in the SOT429 (TO247) conventional leaded package.
The PHB11N50E is supplied in the SOT404 surface mounting package.
PINNING
SOT404
SOT429 (TO247)
PIN DESCRIPTION
tab
1 gate
2 drain1
3 source
tab drain
2
13
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 k
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
± 30
10.9
6.9
44
156
150
UNIT
V
V
V
A
A
A
W
˚C
1 It is not possible to make connection to pin 2 of the SOT404 package.
December 1998
1
Rev 1.000
http://www.Datasheet4U.com

1 Page





PHP12N50E pdf, ピン配列
Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHB11N50E, PHW11N50E
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS Continuous source current Tmb = 25˚C
(body diode)
ISM Pulsed source current (body Tmb = 25˚C
diode)
VSD Diode forward voltage
IS = 11 A; VGS = 0 V
trr
Reverse recovery time
IS = 11 A; VGS = 0 V; dI/dt = 100 A/µs
Qrr Reverse recovery charge
MIN. TYP. MAX. UNIT
- - 10.9 A
- - 44 A
- - 1.2 V
- 630 - ns
- 6.9 - µC
December 1998
3
Rev 1.000
http://www.Datasheet4U.com


3Pages


PHP12N50E 電子部品, 半導体
Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHB11N50E, PHW11N50E
Gate-source voltage, VGS (V)
15
14 ID = 11A
13
12
Tj = 25 C
11
200V
10
9 100 V
8
7 VDD=400V
6
5
4
3
2
1
0
0 20 40 60 80
Gate charge, QG (nC)
PHP11N50E
100 120
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); parameter VDS
Source-Drain Diode Current, IF (A)
20
PHP11N50E
18
16
14
12
10
8
150 C
Tj = 25 C
6
4
2
0
0 0.2 0.4 0.6 0.8 1 1.2
Drain-Source Voltage, VSDS (V)
Fig.16. Source-Drain diode characteristic.
IF = f(VSDS); parameter Tj
Switching times, td(on), tr, td(off), tf (ns)
450
VDD = 250V
400
RD = 22 Ohms
350
PHP11N50E
td(off)
300
250
200
150 tf
100 tr
50 td(on)
0
0 10 20 30 40 50
Gate resistance, RG (Ohms)
Fig.14. Typical switching times; td(on), tr, td(off), tf = f(RG)
Normalised Drain-source breakdown voltage
1.15
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
1.1
1.05
1
0.95
0.9
0.85
-100
-50 0 50 100
Tj, Junction temperature (C)
150
Fig.15. Normalised drain-source breakdown voltage;
V(BR)DSS/V(BR)DSS 25 ˚C = f(Tj)
Non-repetitive Avalanche current, IAS (A)
100
Tj prior to avalanche = 25 C
10
VDS
1
ID
0.1
1E-06
125 C
tp
PHP12N50E
1E-05
1E-04
1E-03
Avalanche time, tp (s)
1E-02
Fig.17. Maximum permissible non-repetitive
avalanche current (IAS) versus avalanche time (tp);
unclamped inductive load
Maximum Repetitive Avalanche Current, IAR (A)
100
10 Tj prior to avalanche = 25 C
1
125 C
0.1
0.01
1E-06
PHP12N50E
1E-05
1E-04
1E-03
Avalanche time, tp (s)
1E-02
Fig.18. Maximum permissible repetitive avalanche
current (IAR) versus avalanche time (tp)
December 1998
6
Rev 1.000
http://www.Datasheet4U.com

6 Page



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部品番号部品説明メーカ
PHP12N50E

PowerMOS transistors

Philips
Philips


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