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PDF SI2305 Data sheet ( Hoja de datos )
| Número de pieza | SI2305 | |
| Descripción | 20V P-Channel Enhancement Mode MOSFET | |
| Fabricantes | HT Semi | |
| Logotipo |  |
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20V P-Channel Enhancement Mode MOSFET
VDS= -20V
RDS(ON), [email protected], [email protected]
RDS(ON), [email protected], [email protected]
130mΩ
190mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
SI2305
D
SOT-23(PACKAGE)
GS
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90
1.00
0.10
0.40
0.85
REF.
1.30
0.20
-
1.15
0° 10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1)
Maximum Power Dissipation 2)
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted) 2)
Junction-to-Ambient Thermal Resistance (PCB mounted) 3)
TA = 25o
TA = 75oC
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
RthJA
Limit
-20
±8
-2.2
-8
1.25
0.8
-55 to 150
100
166
Notes
1) Pulse width limited by maximum junction temperature.
2) Surface Mounted on FR4 Board, t v 5 sec.
3) Surface Mounted on FR4 Board.
Unit
V
A
W
oC
oC/W
JinYu
semiconductor
www.htsemi.com
http://www.Datasheet4U.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SI2305.PDF ] | |
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