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MBRF10100 の電気的特性と機能

MBRF10100のメーカーはTaiwan Semiconductor Companyです、この部品の機能は「Schottky Barrier Rectifiers」です。


製品の詳細 ( Datasheet PDF )

部品番号 MBRF10100
部品説明 Schottky Barrier Rectifiers
メーカ Taiwan Semiconductor Company
ロゴ Taiwan Semiconductor Company ロゴ 




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MBRF10100 Datasheet, MBRF10100 PDF,ピン配置, 機能
MBRF1035 thru MBRF10200
Taiwan Semiconductor
CREAT BY ART
Isolated Schottky Barrier Rectifiers
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: ITO-220AC
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.7 g (approximately)
ITO-220AC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF
SYMBOL
UNIT
1035 1045 1050 1060 1090 10100 10150 10200
Maximum repetitive peak reverse voltage
VRRM
35 45
50
60
90 100 150 200
V
Maximum RMS voltage
VRMS
24 31 35 42 63 70 105 140 V
Maximum DC blocking voltage
VDC 35 45 50 60 90 100 150 200 V
Maximum average forward rectified current
IF(AV)
10
A
Peak repetitive forward current
(Rated VR, square wave, 20KHz)
IFRM
20 A
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
IF=10A, TJ=25
IF=10A, TJ=125
Maximum reverse current @ Rated VR TJ=25
TJ=125
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
IFSM
IRRM
VF
IR
dV/dt
RθJC
TJ
TSTG
1
0.70
0.57
15
150
0.5
0.80 0.85
0.70 0.71
0.1
10 6
10000
3
- 55 to +150
- 55 to +175
A
A
1.05
-
2
4
V
mA
V/μs
OC/W
OC
OC
Document Number: DS_D1309008
Version: K13

1 Page





MBRF10100 pdf, ピン配列
10000
CREAT BY ART
FIG. 5 TYPICAL JUNCTION CAPACITANCE PER LEG
f=1.0MHz
Vsig=50mVp-p
1000
MBRF1035 - MBRF1045
MBRF1050 - MBRF1060
MBRF1035 thru MBRF10200
Taiwan Semiconductor
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE PER
LEG
100
10
1
MBRF1090 - MBRF10200
100
0.1 1 10
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
100
MARKING DIAGRAM
P/N
G
YWW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
0.1
0.01
0.1 1 10
T-PULSE DURATION(s)
100
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Unit (mm)
Min Max
4.30 4.70
2.50 3.10
2.30 2.90
0.46 0.76
6.30 6.90
9.60 10.30
3.00 3.40
0.00 1.60
0.95 1.45
0.50 0.90
2.40 3.20
14.80 15.50
- 4.10
- 1.80
12.60 13.80
4.95 5.20
Unit (inch)
Min
0.169
Max
0.185
0.098 0.122
0.091 0.114
0.018 0.030
0.248 0.272
0.378 0.406
0.118 0.134
0.000 0.063
0.037 0.057
0.020 0.035
0.094 0.126
0.583 0.610
- 0.161
- 0.071
0.496 0.543
0.195 0.205
Document Number: DS_D1309008
Version: K13


3Pages





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[ MBRF10100 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


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MBRF10100

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Taiwan Semiconductor Company
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