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FDP5N50F の電気的特性と機能

FDP5N50FのメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDP5N50F
部品説明 N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDP5N50F Datasheet, FDP5N50F PDF,ピン配置, 機能
FDP5N50F / FDPF5N50FT
N-Channel MOSFET, FRFET
500V, 4.5A, 1.55
Features
• RDS(on) = 1.25( Typ.)@ VGS = 10V, ID = 2.25A
• Low gate charge ( Typ. 11nC)
• Low Crss ( Typ. 5pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
December 2007
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power factor-
correction.
D
G
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP5N50F FDPF5N50FT
500
±30
4.5 4.5*
2.7 2.7*
18 18*
233
4.5
8.5
4.5
85 28
0.67 0.22
-55 to +150
300
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
FDP5N50F
1.4
0.5
62.5
FDPF5N50FT
4.5
-
62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2007 Fairchild Semiconductor Corporation
FDP5N50F / FDPF5N50FT Rev. A1
1
www.fairchildsemi.com
http://www.Datasheet4U.com

1 Page





FDP5N50F pdf, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
10 VGS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
1 5.5 V
0.1
0.04
0.1
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
1
VDS,Drain-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.2
2.0
1.8
VGS = 10V
1.6 VGS = 20V
1.4
1.2
0
*Note: TJ = 25oC
4 8 12
ID, Drain Current [A]
16
20
Figure 5. Capacitance Characteristics
1000
750
500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss
Coss
250
Crss
0
0.1 1 10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
20
10
150oC
25oC
1
0.1
4
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
567
VGS,Gate-Source Voltage[V]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
50
10
150oC
25oC
1
0.2
0.0
*Notes:
1. VGS = 0V
2. 250µs Pulse Test
0.4 0.8 1.2
VSD, Body Diode Forward Voltage [V]
1.6
Figure 6. Gate Charge Characteristics
10
VDS = 100V
VDS = 250V
8 VDS = 400V
6
4
2
*Note: ID = 5A
0
0 3 6 9 12
Qg, Total Gate Charge [nC]
FDP5N50F / FDPF5N50FT Rev. A1
3
www.fairchildsemi.com
http://www.Datasheet4U.com


3Pages


FDP5N50F 電子部品, 半導体
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP5N50F / FDPF5N50FT Rev. A1
6
www.fairchildsemi.com
http://www.Datasheet4U.com

6 Page



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共有リンク

Link :


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