|
|
STGP20V60DFのメーカーはSTMicroelectronicsです、この部品の機能は「600V 20A very high speed trench gate field-stop IGBT」です。 |
部品番号 | STGP20V60DF |
| |
部品説明 | 600V 20A very high speed trench gate field-stop IGBT | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTGP20V60DFダウンロード(pdfファイル)リンクがあります。 Total 23 pages
STGB20V60DF, STGP20V60DF,
STGW20V60DF, STGWT20V60DF
600 V, 20 A very high speed
trench gate field-stop IGBT
Datasheet - production data
TAB
TAB
3
2
1
TO-220
3
1
D²PAK
TAB
3
2
1
TO-247
3
2
1
TO-3P
Figure 1. Internal schematic diagram
Features
• Maximum junction temperature: TJ = 175 °C
• Very high speed switching series
• Tail-less switching off
• Low saturation voltage: VCE(sat) = 1.8 V (typ.)
@ IC = 20 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode
• Lead free package
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the "V" series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive VCE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
Order code
Table 1. Device summary
Marking
Package
Packaging
STGB20V60DF
STGP20V60DF
STGW20V60DF
STGWT20V60DF
GB20V60DF
GP20V60DF
GW20V60DF
GWT20V60DF
D²PAK
TO-220
TO-247
TO-3P
Tape and reel
Tube
Tube
Tube
June 2013
This is information on a product in full production.
DocID024360 Rev 3
1/23
www.st.com
23
http://www.Datasheet4U.com
1 Page STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
1 Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
VCES Collector-emitter voltage (VGE = 0)
600
IC Continuous collector current at TC = 25 °C
40
IC
(1)
ICP
Continuous collector current at TC = 100 °C
Pulsed collector current
20
80
VGE Gate-emitter voltage
±20
IF Continuous forward current at TC = 25 °C
40
IF Continuous forward current at TC = 100 °C
20
IFP(1) Pulsed forward current
80
PTOT Total dissipation at TC = 25 °C
167
TSTG Storage temperature range
- 55 to 150
TJ Operating junction temperature
- 55 to 175
1. Pulse width limited by maximum junction temperature and turn-off within RBSOA
Symbol
Table 3. Thermal data
Parameter
RthJC
RthJC
RthJA
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Value
0.9
2.08
50
Unit
V
A
A
A
V
A
A
A
W
°C
°C
Unit
°C/W
°C/W
°C/W
DocID024360 Rev 3
3/23
http://www.Datasheet4U.com
3Pages Electrical characteristics
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
2.1 Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperature
Figure 3. Collector current vs. case temperature
Ptot (W)
160
140
120
100
80
60
40
20
0
0
AM17175v1
25 50 75 100 125 150 175 TC (°C)
IC (A)
40
35
30
25
20
15
10
5
0
0
AM17174v1
25 50 75 100 125 150 175 TC(°C)
Figure 4. Output characteristics (TJ = 25 °C)
Ic (A)
70
15 V
11 V
AM17171v1
60
50
40
13 V
30
9V
20
10
VGE =7 V
0
0 1 2 3 4 VCE (V)
Figure 5. Output characteristics (TJ = 175 °C)
Ic (A)
AM17172v1
70
15 V
60 11 V
50
40
13 V
9V
30
20
10
VGE =7 V
0
0 1 2 3 4 VCE (V)
Figure 6. VCE(SAT) vs. junction temperature
VCE(sat)
(V)
2.8
2.6
VGE = 15V
IC 40A
AM17176v1
2.4
IC = 20A
2.2
2.0
1.8
1.6 IC= 10A
1.4
1.2
-50 -25 0 25 50 75 100 125 150 175 TJ(ºC)
Figure 7. VCE(SAT) vs. collector current
VCE (V)
4.0
3.6
VGE = 15V
TJ = 175°C
AM17177v1
3.2 TJ= 25°C
2.8
2.4
2.0
1.6 TJ= - 40°C
1.2
0.8
0 10 20 30 40 50 60 70 80 IC (A)
6/23 DocID024360 Rev 3
http://www.Datasheet4U.com
6 Page | |||
ページ | 合計 : 23 ページ | ||
|
PDF ダウンロード | [ STGP20V60DF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
STGP20V60DF | 600V 20A very high speed trench gate field-stop IGBT | STMicroelectronics |