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SW740U の電気的特性と機能

SW740UのメーカーはSEMIPOWERです、この部品の機能は「N-channel TO-220 MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 SW740U
部品説明 N-channel TO-220 MOSFET
メーカ SEMIPOWER
ロゴ SEMIPOWER ロゴ 




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SW740U Datasheet, SW740U PDF,ピン配置, 機能
SAMWIN
SW740U
N-channel TO-220 MOSFET
Features
TO-220
High ruggedness
RDS(ON) (Max 0.55)@VGS=10V
Gate Charge (Typical 38nC)
Improved dv/dt Capability
100% Avalanche Tested
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant
topology like a electronic ballast, and also low power switching
mode power appliances.
BVDSS : 400V
ID : 10A
RDS(ON) : 0.55ohm
2
1
3
Order Codes
Item
1
Sales Type
SW P 740U
Marking
SW740
Package
TO-220
Packaging
TUBE
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
Gate to Source Voltage
(note 1)
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
Thermal characteristics
Symbol
Rthjc
Rthcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
400
10*
6.3*
40
±30
1200
170
5
226
1.8
-55 ~ + 150
300
Value
0.55
0.5
58
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
1/5
http://www.Datasheet4U.com

1 Page





SW740U pdf, ピン配列
SAMWIN
Fig. 1. On-state characteristics
SW740U
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 3. Gate charge characteristics
Fig. 4. On state current vs. diode
forward voltage
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 6. On resistance variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
3/5
http://www.Datasheet4U.com


3Pages





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共有リンク

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部品番号部品説明メーカ
SW740

N-Channel MOSFET

SAMWIN
SAMWIN
SW740U

N-channel TO-220 MOSFET

SEMIPOWER
SEMIPOWER


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