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SW5N60のメーカーはSEMIPOWERです、この部品の機能は「N-channel TO-220F MOSFET」です。 |
部品番号 | SW5N60 |
| |
部品説明 | N-channel TO-220F MOSFET | ||
メーカ | SEMIPOWER | ||
ロゴ | |||
このページの下部にプレビューとSW5N60ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
SAMWIN
SW5N60
N-channel TO-220F MOSFET
Features
■ High ruggedness
■ RDS(ON) (Max 2.2Ω)@VGS=10V
■ Gate Charge (Typical 22nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-220F
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
BVDSS : 600V
ID : 5.0A
RDS(ON) : 2.2ohm
2
1
3
Order Codes
Item
1
Sales Type
SW F 5N60
Marking
SW5N60
Package
TO-220F
Packaging
TUBE
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 1)
(note 2)
(note 1)
(note 3)
TSTG, TJ
TL
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Rthcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
600
5.0*
3.15*
20
±30
135
27
5
24
0.19
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Value
5.3
-
49
Unit
oC/W
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
1/5
http://www.Datasheet4U.com
1 Page SAMWIN
Fig. 1. On-state characteristics
SW5N60
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 3. Gate charge characteristics
Fig. 4. On state current vs. diode
forward voltage
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 6. On resistance variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
3/5
http://www.Datasheet4U.com
3Pages | |||
ページ | 合計 : 5 ページ | ||
|
PDF ダウンロード | [ SW5N60 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
SW5N60 | N-channel TO-220F MOSFET | SEMIPOWER |