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SW5N60 の電気的特性と機能

SW5N60のメーカーはSEMIPOWERです、この部品の機能は「N-channel TO-220F MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 SW5N60
部品説明 N-channel TO-220F MOSFET
メーカ SEMIPOWER
ロゴ SEMIPOWER ロゴ 




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SW5N60 Datasheet, SW5N60 PDF,ピン配置, 機能
SAMWIN
SW5N60
N-channel TO-220F MOSFET
Features
High ruggedness
RDS(ON) (Max 2.2)@VGS=10V
Gate Charge (Typical 22nC)
Improved dv/dt Capability
100% Avalanche Tested
TO-220F
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
BVDSS : 600V
ID : 5.0A
RDS(ON) : 2.2ohm
2
1
3
Order Codes
Item
1
Sales Type
SW F 5N60
Marking
SW5N60
Package
TO-220F
Packaging
TUBE
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 1)
(note 2)
(note 1)
(note 3)
TSTG, TJ
TL
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Rthcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
600
5.0*
3.15*
20
±30
135
27
5
24
0.19
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Value
5.3
-
49
Unit
oC/W
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
1/5
http://www.Datasheet4U.com

1 Page





SW5N60 pdf, ピン配列
SAMWIN
Fig. 1. On-state characteristics
SW5N60
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 3. Gate charge characteristics
Fig. 4. On state current vs. diode
forward voltage
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 6. On resistance variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
3/5
http://www.Datasheet4U.com


3Pages





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部品番号部品説明メーカ
SW5N60

N-channel TO-220F MOSFET

SEMIPOWER
SEMIPOWER


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