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BLV45-12 の電気的特性と機能

BLV45-12のメーカーはPhilipsです、この部品の機能は「VHF power transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 BLV45-12
部品説明 VHF power transistor
メーカ Philips
ロゴ Philips ロゴ 




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BLV45-12 Datasheet, BLV45-12 PDF,ピン配置, 機能
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV45/12
VHF power transistor
Product specification
August 1986
http://www.Datasheet4U.com

1 Page





BLV45-12 pdf, ピン配列
Philips Semiconductors
VHF power transistor
Product specification
BLV45/12
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
vCBOM
VCEO
VEBO
d.c. or average
peak value; f > 1 MHz
Total power dissipation
IC
ICM
at Tmb = 25 °C; f > 1 MHz
Storage temperature
Operating junction temperature
Ptot
Tstg
Tj
max.
max.
max.
36 V
16,5 V
4V
max.
max.
9A
27 A
max.
90 W
65 to + 150 °C
max.
200 °C
handbook,1h0alfpage
IC
(A)
MGP347
Th = 70 °C
Tmb = 25 °C
160
handbook, halfpage
Ptot
(W)
80
ΙΙ
Ι
MGP348
1
1
Rth mb-h = 0,2 K/W.
10 16.5 VCE (V)
Fig.2 D.C. soar.
102
THERMAL RESISTANCE
Dissipation = 68 W; Tmb = 25 °C
From junction to mounting base
(r.f. dissipation)
From mounting base to heatsink
0
0 100 Th (°C)
I Continuous operation (f > 1 MHz)
II Short-time operation during mismatch; (f > 1 MHz)
200
Fig.3 Power/temperature derating curves;
Rth mb-h = 0,2 K/W.
Rth jmb
Rth mbh
=
=
1,58 K/W
0,2 K/W
August 1986
3
http://www.Datasheet4U.com


3Pages


BLV45-12 電子部品, 半導体
Philips Semiconductors
VHF power transistor
handbook, full pagewidth
162
Product specification
BLV45/12
rivets
Cu strap
70
soldered copper
straps
ground plane
removed
L5
L1
C1 C3
L2
C2
L4
C4
L3
C5
L9
+VCC
C6 R1
C9
L7
L6
L8
C8
C7
C10
L10 C12
C11
MGP352
Fig.7 Printed circuit board and component lay-out for 175 MHz class-B test circuit.
The circuit and components are on one side of the epoxy fibre-glass board. The other side, except for the area indicated
by the dotted line, is unetched copper serving as a ground plane.
If the p.c.b. is in direct contact with the heatsink, the heatsink area within the dotted line has to raised al least 0,5 mm to
minimize the dielectric losses.
Earth connections are made by hollow rivets and additionally by fixing screws and copper straps under the emitters to
provide a direct contact between the copper of the component side and the ground plane.
August 1986
6
http://www.Datasheet4U.com

6 Page



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部品番号部品説明メーカ
BLV45-12

VHF power transistor

Philips
Philips


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