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DKI06075のメーカーはSANKENです、この部品の機能は「N Channel Trench Power MOSFET」です。 |
部品番号 | DKI06075 |
| |
部品説明 | N Channel Trench Power MOSFET | ||
メーカ | SANKEN | ||
ロゴ | |||
このページの下部にプレビューとDKI06075ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
60 V, 48 A, 5.3 mΩ Low RDS(ON)
N ch Trench Power MOSFET
DKI06075
Features
V(BR)DSS --------------------------------- 60 V (ID = 100 µA)
ID ---------------------------------------------------------- 48 A
RDS(ON) ------------ 7.0 mΩ max. (VGS = 10 V, ID = 34 A)
Qg-------- 26.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 39 A)
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Package
TO-252
(4)
D
(1) (2) (3)
GDS
(3) (2) (1)
SDG
Applications
DC-DC converters
Synchronous Rectification
Power Supplies
Equivalent circuit
D(2)(4)
G(1)
S(3)
Not to scale
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Drain to Source Voltage
VDS
Gate to Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
IDM
IS
ISM
Single Pulse Avalanche Energy
EAS
Avalanche Current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
IAS
PD
TJ
TSTG
Test conditions
TC = 25 °C
PW ≤ 100µs
Duty cycle ≤ 1 %
PW ≤ 100µs
Duty cycle ≤ 1 %
VDD = 30 V, L = 1 mH,
IAS = 11.2 A, unclamped,
RG = 4.7 Ω
Refer to Figure 1
TC = 25 °C
Rating
60
± 20
48
96
48
96
126
23.3
61
150
− 55 to 150
Unit
V
V
A
A
A
A
mJ
A
W
°C
°C
DKI06075-DS Rev.1.5
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp
1
1 Page DKI06075
Test Circuits and Waveforms
VGS
RG
0V
L
ID
VDS
E AS
1
2
L IAS2
V(BR)DSS
V(BR)DSS VDD
VDD
VDS
ID
IAS
(a) Test Circuit
Figure 1 Unclamped Inductive Switching
(b) Waveform
V(BR)DSS
VDD
RL
VGS
RG
0V
P.W. = 10 μs
Duty cycle ≤ 1 %
VDS
VDD
VGS
VDS
td(on) tr
ton
(a) Test Circuit
Figure 2 Switching Time
td(off) tf
toff
(b) Waveform
90%
10%
90%
10%
VGS
0V
D.U.T.
RG
IF L
VDD
IF
0V
di/dt
trr
IRM × 90 %
IRM
(a) Test Circuit
Figure 3 Diode Reverse Recovery Time
(b) Waveform
DKI06075-DS Rev.1.5
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
3
3Pages DKI06075
Package Outline
TO252
NOTES:
1) Dimension is in millimeters
2) Pb-free. Device composition compliant with the RoHS directive
Marking Diagram
Symbol
A
A1
b
b1
b2
b3
c
c1
c2
D
D1
E
E1
e
H
L
L1
L2
L3
L4
L5
θ
θ1
φ
Min. Max.
2.18 2.39
-- 0.13
0.70 0.89
0.70 0.86
0.76 1.14
4.95 5.46
0.46 0.61
0.41 0.56
0.46 0.89
5.97 6.22
5.21 --
6.35 6.73
4.32 --
2.29
9.40 10.41
1.40 1.78
2.60 2.90
0.51
1.65 1.95
0.60 0.90
0.89 1.27
1° 5°
7° REF
1.20 REF
SK
DKI×××××
YMDD XXXB
Part Number
Lot Number
Y is the Last digit of the year (0 to 9)
M is the Month (1 to 9, O, N or D)
DD is the Date (two digit of 01 to 31)
XXX is the suffix No.
B expresses Pb free pins
DKI06075-DS Rev.1.5
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
6
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ DKI06075 データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
DKI06075 | N Channel Trench Power MOSFET | SANKEN |