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Datasheet CPZ36R Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | CPZ36R | 5.0 Volt TVS Chip PROCESS
5.0 Volt TVS Chip
CPZ36R
Transient Voltage Suppressor
PROCESS DETAILS Die Size Die Thickness Cathode Bonding Pad Area Top Side Metalization Back Side Metalization 10.2 x 10.2 MILS 3.9 MILS 7.1 MILS DIAMETER Al - 30,000Å Au - 12,000Å
GEOMETRY GROSS DIE PER 5 INCH WAFER 163,034 PRINCIPAL |  centralsemi | data |
CPZ Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CPZ28 | 0.5 Watt Zener Diode Chip PROCESS
Zener Diode
CPZ28
0.5 Watt Zener Diode Chip
PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 13 x 13 MILS 7.8 MILS 7.0 x 7.0 MILS Ti/Al - 13,000Å Au-As - 13,000Å
GEOMETRY GROSS DIE PER 5 INCH WAFER 101,1 centralsemi diode | | |
| 2 | CPZ33R | 12 Volt Quad TVS Chip PROCESS
CPZ33R
Transient Voltage Suppressor
12 Volt Quad TVS Chip
PROCESS DETAILS Die Size Die Thickness Cathode Bonding Pad Areas (4) Top Side Metalization Back Side Metalization 14.2 x 14.2 MILS 3.9 MILS 4.7 MILS DIAMETER EACH Al - 13,000Å Au - 12,000Å
GEOMETRY GROSS DIE PER 5 INCH WAFER 84, centralsemi data | | |
| 3 | CPZ34R | 6.2 Volt TVS Chip PROCESS
6.2 Volt TVS Chip
CPZ34R
Transient Voltage Suppressor
PROCESS DETAILS Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization 6.7 x 6.7 MILS 3.54 MILS 4.5 x 4.5 MILS Al - 30,000Å Au.As - 12,000Å
GEOMETRY GROSS DIE PER 5 INCH WAFER 374,272 PRINCIPAL DE centralsemi data | | |
| 4 | CPZ35R | 3.3 Volt TVS Chip PROCESS
3.3 Volt TVS Chip
CPZ35R
Transient Voltage Suppressor
PROCESS DETAILS Die Size Die Thickness Cathode Bonding Pad Area Top Side Metalization Back Side Metalization 10.2 x 10.2 MILS 3.9 MILS 7.1 MILS DIAMETER Al - 30,000Å Au - 12,000Å
GEOMETRY GROSS DIE PER 5 INCH WAFER 163,034 PRINCIPAL centralsemi data | | |
| 5 | CPZ36R | 5.0 Volt TVS Chip PROCESS
5.0 Volt TVS Chip
CPZ36R
Transient Voltage Suppressor
PROCESS DETAILS Die Size Die Thickness Cathode Bonding Pad Area Top Side Metalization Back Side Metalization 10.2 x 10.2 MILS 3.9 MILS 7.1 MILS DIAMETER Al - 30,000Å Au - 12,000Å
GEOMETRY GROSS DIE PER 5 INCH WAFER 163,034 PRINCIPAL centralsemi data | | |
| 6 | CPZ37R | 12 Volt TVS Chip PROCESS
12 Volt TVS Chip
CPZ37R
Transient Voltage Suppressor
PROCESS DETAILS Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization 6.7 x 6.7 MILS 3.54 MILS 4.3 x 4.3 MILS Al - 13,000Å Au-As/Ag - 13,000Å/6,000Å
GEOMETRY GROSS DIE PER 5 INCH WAFER 368,512 PR centralsemi data | | |
| 7 | CPZ39R | 5 Volt Quad TVS Chip PROCESS
CPZ39R
Transient Voltage Suppressor
5 Volt Quad TVS Chip
PROCESS DETAILS Die Size Die Thickness Cathode Bonding Pad Areas (4) Top Side Metalization Back Side Metalization 11 x 11 MILS 3.94 MILS 3.54 MILS DIAMETER EACH Al - 30,000Å Au - 9,000Å
GEOMETRY GROSS DIE PER 5 INCH WAFER 140,490 centralsemi data | |
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