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15N60C3 の電気的特性と機能

15N60C3のメーカーはInfineonです、この部品の機能は「SPP15N60C3」です。


製品の詳細 ( Datasheet PDF )

部品番号 15N60C3
部品説明 SPP15N60C3
メーカ Infineon
ロゴ Infineon ロゴ 




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15N60C3 Datasheet, 15N60C3 PDF,ピン配置, 機能
SPP15N60C3, SPI15N60C3
SPA15N60C3
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
Periodic avalanche rated
PG-TO220FP PG-TO262
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
P-TO220-3-31
3
12
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
650 V
0.28
15 A
PG-TO220
Type
SPP15N60C3
SPI15N60C3
SPA15N60C3
Package
PG-TO220
PG-TO262
PG-TO220FP
Ordering Code
Q67040-S4600
Q67040-S4601
SP000216325
Marking
15N60C3
15N60C3
15N60C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=7.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=15A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Reverse diode dv/dt 6)
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
dv/dt
Value
SPP_I
SPA
15 151)
9.4 9.41)
45 45
460 460
Unit
A
A
mJ
0.8 0.8
15 15
±20 ±20
±30 ±30
156 34
-55...+150
15
A
V
W
°C
V/ns
Rev. 3.2
page 1
2009-12-22

1 Page





15N60C3 pdf, ピン配列
SPP15N60C3, SPI15N60C3
SPA15N60C3
Electrical Characteristics
Parameter
Symbol
Conditions
Transconductance
gfs
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Effective output capacitance,4) Co(er)
energy related
Effective output capacitance,5) Co(tr)
time related
VDS2*ID*RDS(on)max,
ID=9.4A
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
VDS=0V to 480V
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
VDD=480V, VGS=0/10V,
ID=15A,
RG=4.3
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs VDD=480V, ID=15A
Qgd
Qg VDD=480V, ID=15A,
VGS=0 to 10V
V(plateau) VDD=480V, ID=15A
min.
-
Values
typ. max.
11.9 -
Unit
S
- 1660 - pF
- 540 -
- 40 -
- 80 -
- 127 -
- 10 - ns
-5-
- 50 80
- 5 10
- 7 - nC
- 29 -
- 63 -
- 5 -V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3Soldering temperature for TO-263: 220°C, reflow
4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
6ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
Rev. 3.2
page 3
2009-12-22


3Pages


15N60C3 電子部品, 半導体
5 Transient thermal impedance
ZthJC = f (tp)
parameter: D = tp/T
10 1
K/W
10 0
SPP15N60C3, SPI15N60C3
SPA15N60C3
6 Transient thermal impedance FullPAK
ZthJC = f (tp)
parameter: D = tp/t
10 1
K/W
10 0
10 -1
10 -2
10 -3
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -1
10 -2
10 -3
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
7 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
60 Vgs = 20V
Vgs = 7V
A Vgs = 6.5V
Vgs = 6V
Vgs = 5.5V
Vgs = 5V
Vgs = 4.5V
40 Vgs = 4V
s 10 -1
tp
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
s 10 1
tp
8 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
30 Vgs = 20V
Vgs = 7V
A Vgs = 6V
Vgs = 5.5V
Vgs = 5V
Vgs = 4.5V
Vgs = 4V
20
30 15
20 10
10 5
00 4 8 12 16 20 V 28
VDS
Rev. 3.2
page 6
00 4 8 12 16 20 V 28
VDS
2009-12-22

6 Page



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部品番号部品説明メーカ
15N60C3

SPP15N60C3

Infineon
Infineon


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