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IRHLNM77110 の電気的特性と機能

IRHLNM77110のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHLNM77110
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHLNM77110 Datasheet, IRHLNM77110 PDF,ピン配置, 機能
PD-97326A
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (SMD-0.2)
Product Summary
Part Number Radiation Level
IRHLNM77110 100K Rads (Si)
IRHLNM73110 300K Rads (Si)
RDS(on)
0.29
0.29
ID
6.5A
6.5A
2N7609U8
IRHLNM77110
100V, N-CHANNEL
TECHNOLOGY
™
International Rectifier’s R7TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
Absolute Maximum Ratings
Parameter
ID @VGS = 4.5V,TC = 25°C
ID @VGS = 4.5V,TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
SMD-0.2
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
6.5
4.1
26
23.2
0.18
±10
21
6.5
2.32
4.3
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5s)
0.25 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
02/21/12
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IRHLNM77110 pdf, ピン配列
PRraed-IirartaiodniaCtiohnaracteristics
IRHLNM77110, 2N7609U8
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Source On-state „
Resistance (SMD-0.2)
Upto 300K Rads (Si)1
Min Max
100 —
1.0 2.0
— 100
— -100
— 1.0
— 0.32
— 0.29
VSD Diode Forward Voltage„
1. Part numbers IRHLNM77110, IRHLNM73110
1.2
Units
V
nA
µA
V
Test Conditions
VGS = 0V, ID = 250µA
VGS = VDS, ID = 250µA
VGS = 10V
VGS = -10V
VDS= 80V, VGS=0V
VGS = 4.5V, ID = 4.1A
VGS = 4.5V, ID = 4.1A
VGS = 0V, ID = 6.5A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
38 ± 5%
62 ± 5%
85 ± 5%
300 ± 7.5%
355 ± 7.5%
380 ± 10%
(µm)
38 ± 7.5%
33 ± 7.5%
29 ± 7.5%
@VGS=
0V
100
100
100
@VGS=
-2V
100
100
100
@VGS=
-4V
100
100
100
@VGS=
-5V
100
100
100
@VGS=
-6V
100
100
-
@VGS=
-7V
100
-
-
120
100
80
60
40
20
0
0 -1 -2 -3 -4 -5 -6 -7
VGS
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
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IRHLNM77110 電子部品, 半導体
IRHLNM77110, 2N7609U8
Pre-Irradiation
1200
1000
800
600
400
VGS = 0V, f = 1 MHz
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
200 Crss
0
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
TJ = 150°C
1.0
TJ = 25°C
0.1
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2
VSD , Source-to-Drain Voltage (V)
1.4
Fig 11. Typical Source-to-Drain Diode
Forward Voltage
6
12
ID = 6.5A
10
8
VDS = 80V
VDS = 50V
VDS = 20V
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 17
0
0 2 4 6 8 10 12 14 16 18 20
QG, Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
7
6
5
4
3
2
1
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 12. Maximum Drain Current Vs.
Case Temperature
www.irf.com
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部品番号部品説明メーカ
IRHLNM77110

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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