DataSheet.jp

IRHLNM87Y20 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRHLNM87Y20
部品説明 Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



Total 9 pages
		

No Preview Available !

IRHLNM87Y20 Datasheet, IRHLNM87Y20 PDF,ピン配置, 機能
PD-97811
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (SMD-0.2)
IRHLNM87Y20
20V, N-CHANNEL
R8 ™ TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHLNM87Y20 100K Rads (Si)
IRHLNM83Y20 300K Rads (Si)
RDS(on)
15m
15m
ID
17A*
17A*
International Rectifier’s R8TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
Absolute Maximum Ratings
Parameter
ID @VGS = 4.5V,TC = 25°C
ID @VGS = 4.5V,TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
SMD-0.2
(METAL LID)
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
n ESD Rating: Class 1B per MIL-STD-750,
Method 1020
17*
17*
68
36
0.3
±12
37
17
3.6
3.75
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5s)
0.25 (Typical)
g
1
07/09/13
Free Datasheet http://www.Datasheet4U.com

1 Page





ページ 合計 : 9 ページ
PDF
ダウンロード
[ IRHLNM87Y20.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
IRHLNM87Y20

Power MOSFET

International Rectifier
International Rectifier

www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap