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IRHLG73110 の電気的特性と機能

IRHLG73110のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHLG73110
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHLG73110 Datasheet, IRHLG73110 PDF,ピン配置, 機能
PD-97178
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (MO-036AB)
Product Summary
Part Number Radiation Level
IRHLG77110 100K Rads (Si)
IRHLG73110 300K Rads (Si)
RDS(on)
0.22
0.22
ID
1.8A
1.8A
2N7612M1
IRHLG77110
100V, Quad N-CHANNEL
TECHNOLOGY
™
MO-036AB
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 4.5V, TC=25°C
ID @ VGS = 4.5V, TC=100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
1.8
1.1
7.2
1.4
0.01
±10
97
1.8
0.14
11
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
300 (0.063in/1.6mm from case for 10s)
1.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
03/20/08
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IRHLG73110 pdf, ピン配列
PRraed-IirartaiodniaCtiohnaracteristics
IRHLG77110, 2N7612M1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-
ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ (Per Die)
Parameter
Up to 300K Rads (Si)1 Units
Min Max
Test Conditions
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-39)
Static Drain-to-Source On-state „
Resistance (MO-036AB)
100
1.0
2.0
100
-100
10
0.25
0.22
V
nA
µA
VGS = 0V, ID = 250µA
VGS = VDS, ID = 250µA
VGS = 10V
VGS = -10V
VDS= 80V, VGS=0V
VGS = 4.5V, ID = 1.1A
VGS = 4.5V, ID = 1.1A
VSD Diode Forward Voltage „
1. Part numbers IRHLG77110, IRHLG73110
— 1.2 V
VGS = 0V, ID = 1.8A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
Ion LET Energy Range
VDS (V)
(MeV/(mg/cm2)) (MeV)
(µm) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V -1V -2V -4V -5V -6V -7V -8V
Br 37
305 39 100 100 100 100 100 100 100 100
I 60
370 34 100 100 100 100 100 100 -
-
Au 84
390 30 100 100 100 100 100 - - -
120
100
80
60
40
20
0
0 -1 -2 -3 -4 -5 -6 -7 -8
VGS
Br
I
Au
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
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IRHLG73110 電子部品, 半導体
IRHLG77110, 2N7612M1
Pre-Irradiation
1600
1400
1200
1000
800
600
400
200
0
1
VGS = 0V, f = 1 MHz
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
12
ID = 1.8A
10
8
VDS = 80V
VDS = 50V
VDS = 20V
6
4
2 FOR TEST CIRCUIT
SEE FIGURE 17
0
0 4 8 12 16 20 24
QG, Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
1
TJ = 150°C
0.1
TJ = 25°C
0.01
0
VGS = 0V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-to-Drain Voltage (V)
Fig 11. Typical Source-to-Drain Diode
Forward Voltage
6
2
1.5
1
0.5
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 12. Maximum Drain Current Vs.
Case Temperature
www.irf.com
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部品番号部品説明メーカ
IRHLG73110

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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