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IRGS4620DPBF の電気的特性と機能

IRGS4620DPBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRGS4620DPBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRGS4620DPBF Datasheet, IRGS4620DPBF PDF,ピン配置, 機能
IRGS4620DPbF
IRGB4620DPbF
IRGP4620D(-E)PbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V
IC = 20A, TC =100°C
tSC 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.55V @ IC = 12A
C
G
E
n-channel
C CG
G
E
GC
IRGS4620DPbF
D2Pak
E
C
G
E
C
G
E
C
G
IRGB4620DPbF IRGP4620DPbF IRGP4620D-EPbF
TO-220AC
TO-247AC
TO-247AD
Applications
Appliance Drive
Inverters
UPS
G
Gate
C
Collector
E
Emitter
Features
Benefits
Low VCE(ON) and switching losses
High efficiency in a wide range of applications and switching
frequencies
Square RBSOA and maximum junction temperature 175°C
Improved reliability due to rugged hard switching
performance and high power capability
Positive VCE (ON) temperature coefficient
of parameters
and
tight
distribution
Excellent current
sharing
in parallel operation
5µs Short Circuit SOA
Enables short circuit protection scheme
Lead-Free, RoHS Compliant
Environmentally friendly
Base part number
IRGS4620DPBF
IRGB4620DPBF
IRGP4620DPBF
IRGP4620D-EPBF
Package Type
D2Pak
TO-220AB
TO-247AC
TO-247AD
Standard Pack
Form
Tube
Quantity
50
Tape and Reel Right
800
Tape and Reel Left
Tube
800
50
Tube
25
Tube
25
Orderable Part Number
IRGS4620DPBF
IRGS4620DTRRPBF
IRGS4620DTRLPBF
IRGB4620DPBF
IRGP4620DPBF
IRGP4620D-EPBF
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE=15V
Clamped Inductive Load Current, VGE=20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate to Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec. (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw (TO-220, TO-247)
Max.
600
32
20
36
48
16
10
48
±20
±30
140
70
-40 to +175
300
10 lbf·in (1.1 N·m)
Units
V
A
V
W
C
Notes through are on page 7
1 www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
October 29, 2013
Free Datasheet http://www.Datasheet4U.com

1 Page





IRGS4620DPBF pdf, ピン配列
40
30
20
10
0
25 50 75 100 125 150 175
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
100
10µsec
10 100µsec
1msec
1 DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
100
VCE (V)
Fig. 3 - Forward SOA
TC = 25°C; TJ 175°C; VGE = 15V
1000
45
40
35
30
VGE = 18V
VGE = 15V
25
VGE = 12V
VGE = 10V
20 VGE = 8.0V
15
10
5
0
012345678
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
3 www.irf.com © 2013 International Rectifier
IRGS/B/P4620D/EPbF
150
125
100
75
50
25
0
25 50 75 100 125 150 175
TC (°C)
Fig. 2 - Power Dissipation vs.
Case Temperature
100
10
1
10
100 1000
VCE (V)
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
45
40
35 VGE = 18V
VGE = 15V
30 VGE = 12V
VGE = 10V
25 VGE = 8.0V
20
15
10
5
0
012345678
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
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October 29, 2013
Free Datasheet http://www.Datasheet4U.com


3Pages


IRGS4620DPBF 電子部品, 半導体
25
20
15
10
5
0
0
500
1000
1500
diF /dt ( A/µs)
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 12A; TJ = 175°C
400
350 RG = 10Ω
300 RG = 22Ω
250 RG = 47Ω
200
150 RG = 100Ω
100
50
0
0 10 20
IF (A)
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 175°C
30
10000
1000
Cies
100
Coes
Cres
10
0
20 40 60 80 100
VCE (V)
Fig. 24 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
6 www.irf.com © 2013 International Rectifier
IRGS/B/P4620D/EPbF
1400
1200
1000
800
600
400
24A
22Ω
47Ω
12A
10Ω
100Ω
6.0A
200
0
500 1000
diF /dt (A/µs)
1500
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
20 120
18 110
16 100
14 90
12 80
10 70
8 60
6 50
4 40
2 30
0 20
8 10 12 14 16 18
VGE (V)
Fig. 23 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
16
14 VCES = 300V
12 VCES = 400V
10
8
6
4
2
0
0 5 10 15 20 25 30
Q G, Total Gate Charge (nC)
Fig. 25 - Typical Gate Charge vs. VGE
ICE = 12A; L = 600µH
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October 29, 2013
Free Datasheet http://www.Datasheet4U.com

6 Page



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部品番号部品説明メーカ
IRGS4620DPBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier
IRGS4620DPBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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