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PDF IRGB4615DPBF Data sheet ( Hoja de datos )

Número de pieza IRGB4615DPBF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRGB4615DPBF Hoja de datos, Descripción, Manual

IRGS4615DPbF
IRGB4615DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V
IC = 15A, TC = 100°C
tsc > 5µs, Tjmax = 175°C
VCE(on) typ. = 1.55V @ 8A
Applications
Appliance Drives
Inverters
UPS
C
G
E
n-channel
G
Gate
CC
E
G
D2-Pak
IRGS4615DPbF
C
C o lle c to r
E
C
G
TO-220AB
IRGB4615DPbF
E
Em itter
Features
Benefits
Low VCE(ON) and switching losses
High efficiency in a wide range of applications and switching frequencies
Square RBSOA and maximum junction temperature 175°C
Improved reliability due to rugged hard switching performance and higher
power capability
Positive VCE(ON) temperature coefficient and tighter distribution of
parameters
Excellent current sharing in parallel operation
5μs short circuit SOA
Enables short circuit protection scheme
Lead-free, RoHS compliant
Environmentally friendly
Base part number
IRGS4615DPbF
IRGS4615DTRRPbF
IRGS4615DTRLPbF
IRGB4615DPbF
Package Type
D2 PAK
TO-220AB
Standard Pack
Form
Tube
Tape and Reel Right
Tape and Reel Left
Tube
Quantity
50
800
800
50
Orderable Part Number
IRGS4615DPbF
IRGS4615DTRRPbF
IRGS4615DTRLPbF
IRGB4615DPbF
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Breakdown Voltage
IC@ TC = 25°C
Continuous Collector Current
IC@ TC = 100°C
ICM
ILM
Continuous Collector Current
cPulsed Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
IF@TC=25°C
Diode Continuous Forward Current
IF@TC=100°C
IFM
VGE
Diode Continuous Forward Current
dDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC =25°
Maximum Power Dissipation
PD @ TC =100°
Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw TO-220
Max.
600
23
15
24
32
14
9
32
± 20
± 30
99
50
-40 to + 175
300
10lbf. In (1.1 N.m)
Units
V
A
V
W
°C
1 www.irf.com © 2013 International Rectifier
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IRGB4615DPBF pdf
500
450
400
350
300
250 EOFF
200 EON
150
100
50
0
0 5 10 15 20
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 1mH; VCE = 400V, RG = 47Ω; VGE = 15V.
350
300 EOFF
250
200 EON
150
100
50
0
0
25 50 75 100 125
RG (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 1mH; VCE = 400V, ICE = 8A; VGE = 15V
30
25 RG =10 Ω
20 RG =22 Ω
15 RG =47 Ω
10 RG = 100 Ω
5
IRGS/B4615DPbF
1000
100 tdOFF
tF
tdON
10 tR
1
0
5 10 15
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L=1mH; VCE= 400V
RG= 47Ω; VGE= 15V
1000
20
tdOFF
100
tdON
tR
tF
10
0
25 50 75 100 125
RG (Ω)
Fig. 16- Typ. Switching Time vs. RG
TJ = 175°C; L=1mH; VCE= 400V
25 ICE= 8A; VGE= 15V
20
15
10
5
0
0 5 10 15
IF (A)
Fig. 17 - Typical Diode IRR vs. IF
TJ = 175°C
20
0
0 25 50 75 100
RG (Ω)
Fig. 18 - Typical Diode IRR vs. RG
TJ = 175°C; IF = 8.0A
125
5 www.irf.com © 2013 International Rectifier
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October 25, 2013
Free Datasheet http://www.Datasheet4U.com

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IRGB4615DPBF arduino
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
IRGS/B4615DPbF
D2Pak Part Marking Information
T HIS IS AN IRF530S WIT H
LOT CODE 8024
AS S EMBLED ON WW 02, 2000
IN T HE AS S EMBLY LINE "L"
INT ERNAT IONAL
RECT IFIER
LOGO
AS S EMBLY
LOT CODE
F 530S
PART NUMBER
DAT E CODE
YEAR 0 = 2000
WEEK 02
LINE L
OR
INT ERNAT IONAL
RECT IFIER
LOGO
AS S EMBLY
LOT CODE
F530S
PART NUMBER
DAT E CODE
P = DES IGNATES LEAD - FREE
PRODUCT (OPT IONAL)
YEAR 0 = 2000
WEEK 02
A = AS S EMBLY S ITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
October 25, 2013
Free Datasheet http://www.Datasheet4U.com

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