IRGS4615DPBF Datasheet PDF - International Rectifier
| Part Number | IRGS4615DPBF | |
| Description | Power MOSFET ( Transistor ) | |
| Manufacturers | International Rectifier | |
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IRGS4615DPbF
IRGB4615DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V
IC = 15A, TC = 100°C
tsc > 5µs, Tjmax = 175°C
VCE(on) typ. = 1.55V @ 8A
Applications
• Appliance Drives
• Inverters
• UPS
C
G
E
n-channel
G
Gate
CC
E
G
D2-Pak
IRGS4615DPbF
C
C o lle c to r
E
C
G
TO-220AB
IRGB4615DPbF
E
Em itter
Features
→
Benefits
Low VCE(ON) and switching losses
High efficiency in a wide range of applications and switching frequencies
Square RBSOA and maximum junction temperature 175°C
Improved reliability due to rugged hard switching performance and higher
power capability
Positive VCE(ON) temperature coefficient and tighter distribution of
parameters
Excellent current sharing in parallel operation
5μs short circuit SOA
Enables short circuit protection scheme
Lead-free, RoHS compliant
Environmentally friendly
Base part number
IRGS4615DPbF
IRGS4615DTRRPbF
IRGS4615DTRLPbF
IRGB4615DPbF
Package Type
D2 PAK
TO-220AB
Standard Pack
Form
Tube
Tape and Reel Right
Tape and Reel Left
Tube
Quantity
50
800
800
50
Orderable Part Number
IRGS4615DPbF
IRGS4615DTRRPbF
IRGS4615DTRLPbF
IRGB4615DPbF
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Breakdown Voltage
IC@ TC = 25°C
Continuous Collector Current
IC@ TC = 100°C
ICM
ILM
Continuous Collector Current
cPulsed Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
IF@TC=25°C
Diode Continuous Forward Current
IF@TC=100°C
IFM
VGE
Diode Continuous Forward Current
dDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC =25°
Maximum Power Dissipation
PD @ TC =100°
Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw TO-220
Max.
600
23
15
24
32
14
9
32
± 20
± 30
99
50
-40 to + 175
300
10lbf. In (1.1 N.m)
Units
V
A
V
W
°C
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October 25, 2013Free Datasheet http://www.Datasheet4U.com
|
| |
 
500
450
400
350
300
250 EOFF
200 EON
150
100
50
0
0 5 10 15 20
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 1mH; VCE = 400V, RG = 47Ω; VGE = 15V.
350
300 EOFF
250
200 EON
150
100
50
0
0
25 50 75 100 125
RG (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 1mH; VCE = 400V, ICE = 8A; VGE = 15V
30
25 RG =10 Ω
20 RG =22 Ω
15 RG =47 Ω
10 RG = 100 Ω
5
IRGS/B4615DPbF
1000
100 tdOFF
tF
tdON
10 tR
1
0
5 10 15
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L=1mH; VCE= 400V
RG= 47Ω; VGE= 15V
1000
20
tdOFF
100
tdON
tR
tF
10
0
25 50 75 100 125
RG (Ω)
Fig. 16- Typ. Switching Time vs. RG
TJ = 175°C; L=1mH; VCE= 400V
25 ICE= 8A; VGE= 15V
20
15
10
5
0
0 5 10 15
IF (A)
Fig. 17 - Typical Diode IRR vs. IF
TJ = 175°C
20
0
0 25 50 75 100
RG (Ω)
Fig. 18 - Typical Diode IRR vs. RG
TJ = 175°C; IF = 8.0A
125
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October 25, 2013
Free Datasheet http://www.Datasheet4U.com
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRGS4615DPBF electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRGS4615DPBF.PDF Datasheet ] | |
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