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PDF IRFHM8342TRPBF Data sheet ( Hoja de datos )
| Número de pieza | IRFHM8342TRPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VDSS
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
30
16
25
5.0
20
V
m
nC
A
Applications
Control MOSFET for synchronous buck converter
Load Switch
Features
Low Charge (typical 5.2 nC)
Low Thermal Resistance to PCB (<6.2°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Consumer Qualification
Top View
D5
D6
D7
D8
4G
3S
2S
1S
IRFHM8342TRPbF
HEXFET® Power MOSFET
PQFN 3.3 x 3.3 mm
Benefits
Low Switching Losses
Enable better Thermal Dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFHM8342PbF
Package Type
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM8342TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes through are on page 8
1 www.irf.com © 2013 International Rectifier
Max.
± 20
10
28
18
20
112
2.6
20
0.020
-55 to + 150
Units
V
A
W
W/°C
°C
August 22, 2013
Free Datasheet http://www.Datasheet4U.com
1 page  
IRFHM8342TRPbF
50 100
ID = 17A
ID
TOP 2.8A
80 5.9A
40 BOTTOM 17A
30
TJ = 125°C
20
TJ = 25°C
10
246
8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
60
40
20
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 12. On–Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
10
Allowed avalanche Current vs avalanche
1
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
Fig 14. Single Avalanche Event: Pulse Current vs. Pulse Width
1.0E-02
5 www.irf.com © 2013 International Rectifier
August 22, 2013
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFHM8342TRPBF.PDF ] | |
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