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PDF IRFHM8330PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFHM8330PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VDSS
VGS max
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
30
±20
6.6
9.9
9.3
25
V
V
m
nC
A
Applications
Charge and Discharge Switch for Notebook PC Battery Application
System/Load Switch
Control MOSFET for synchronous buck converter
IRFHM8330PbF
HEXFET® Power MOSFET
Top View
D5
D6
4G
3S
G
SS
S
D7
D8
2S
1S
D
D
D
D
D
PQFN 3.3X3.3 mm
Features
Low Thermal Resistance to PCB (<3.8°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Consumer Qualification
Benefits
Enable better Thermal Dissipation
Increased Power Density
results in Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFHM8330PbF
Package Type
PQFN 3.3 mm x 3.3 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM8330TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes through are on page 9
1 www.irf.com © 2013 International Rectifier
Max.
± 20
16
13
55
35
25
210
2.7
33
0.021
-55 to + 150
Units
V
A
W
W/°C
°C
June 4, 2013
Free Datasheet http://www.Datasheet4U.com
1 page  
25
20
ID = 20A
200
150
IRFHM8330PbF
ID
TOP 4.0A
8.5A
BOTTOM 20A
15
10 TJ = 125°C
5
TJ = 25°C
0
0 5 10 15
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
20
100
50
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
tav (sec)
1.0E-02
Fig 14. Single Avalanche Event: Pulse Current vs. Pulse Width
1.0E-01
5 www.irf.com © 2013 International Rectifier
June 4, 2013
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFHM8330PBF.PDF ] | |
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