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Número de pieza | IRFHM8329PBF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRFHM8329PBF (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! VDSS
VGS max
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
30
±20
6.1
8.8
13
24
V
V
m
nC
A
Applications
Charge and Discharge Switch for Notebook PC Battery Application
System/Load Switch
Synchronous MOSFET for Buck Converters
IRFHM8329PbF
HEXFET® Power MOSFET
Top View
D5
D6
4G
3S
S SG
S
D7
D8
2S
1S
D
D
D
D
D
PQFN 3.3X3.3 mm
Features
Low Thermal Resistance to PCB (<3.8°C/W)
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Benefits
Enable better thermal dissipation
Increased Power Density
results in Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFHM8329PbF
Package Type
PQFN 3.3 mm x 3.3 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM8329TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Source Bonding
Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes through are on page 8
1 www.irf.com © 2012 International Rectifier
Max.
± 20
16
13
57
36
24
230
2.6
33
0.021
-55 to + 150
Units
V
A
W
W/°C
°C
December 20, 2012
Free Datasheet http://www.Datasheet4U.com
1 page 25
20
ID = 20A
15
10
5
0
0.0
TJ = 125°C
TJ = 25°C
4.0 8.0 12.0 16.0
VGS, Gate-to-Source Voltage (V)
20.0
Fig 12. On– Resistance vs. Gate Voltage
100
10
IRFHM8329PbF
180
160 ID
TOP
4.0A
140 8.6A
120 BOTTOM 20A
100
80
60
40
20
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C. (Single Pulse)
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 14. Typical Avalanche Current vs. Pulsewidth
1.0E-01
5 www.irf.com © 2012 International Rectifier
December 20, 2012
Free Datasheet http://www.Datasheet4U.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRFHM8329PBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFHM8329PBF | Power MOSFET ( Transistor ) | International Rectifier |
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