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PDF 2SK3508-01MR Data sheet ( Hoja de datos )
| Número de pieza | 2SK3508-01MR | |
| Descripción | N-CHANNEL SILICON POWER MOSFET | |
| Fabricantes | Fuji | |
| Logotipo |  |
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2SK3508-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220F
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
650 V
Continuous drain current
ID
±8 A
Pulsed drain current
ID(puls]
±32 A
Gate-source voltage
VGS
±30 V
Non-repetitive Avalanche current IAR *2
8A
Maximum Avalanche Energy
EAV *1
250 mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20 kV/µs
Peak Diode Recovery dV/dt
dV/dt *3
5 kV/µs
Max. power dissipation
PD Ta=25°C
2.16 W
Tc=25°C
50
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
Isolation voltage
VISO *6
2 kVrms
*1 L=7.19mH, Vcc=65V *2 Tch<=150°C
*4 VDS <= 650V *6 t=60sec f=60Hz
*3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=650V VGS=0V
VDS=520V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=4A VGS=10V
ID=4A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=300V ID=4A
VGS=10V
RGS=10 Ω
VCC=300V
ID=8A
VGS=10V
L=7.19mH Tch=25°C
IF=8A VGS=0V Tch=25°C
IF=8A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
650 V
3.0 5.0 V
25 µA
250
10 100
nA
0.68 0.88 Ω
3.5 7
S
1200 1800
pF
140 210
69
17 26 ns
15 23
34 51
7 11
30 45 nC
11 16.5
10 15
8A
1.00 1.50 V
0.75 µs
5.5 µC
Thermalcharacteristics
Item
Thermal resistance
www.fujielectric.co.jp/denshi/scd
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max.
2.50
58.0
Units
°C/W
°C/W
1
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SK3508-01MR.PDF ] | |
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