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IRF1010のメーカーはnELLです、この部品の機能は「N-Channel Power MOSFET / Transistor」です。 |
部品番号 | IRF1010 |
| |
部品説明 | N-Channel Power MOSFET / Transistor | ||
メーカ | nELL | ||
ロゴ | |||
このページの下部にプレビューとIRF1010ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
SEMICONDUCTOR
IRF1010 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
DESCRIPTION
(84A, 60Volts)
The Nell IRF1010 is a three-terminal silicon
device with current conduction capability
of 84A, fast switching speed, low on-state
resistance, breakdown voltage rating of 60V,
and max. threshold voltage of 4 volts.
They are designed as an extremely efficient
and reliable device for use in a wide variety of
applications. These transistors can be operated
directly from integrated circuits.
FEATURES
RDS(ON) = 8.5mΩ @ VGS = 10V
Ultra low gate charge(86nC max.)
Low reverse transfer capacitance
(CRSS = 200pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
175°C operation temperature
D
GDS
TO-220AB
(IRF1010A)
D
G
D
S
TO-263(D2PAK)
(IRF1010H)
D (Drain)
PRODUCT SUMMARY
ID (A)
ID (A), Package Limited
VDSS (V)
RDS(ON) (mΩ)
QG(nC) max.
84
75
60
8.5 @ VGS = 10V
86
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VALUE
UNIT
VDSS
VDGR
VGS
Drain to Source voltage
Drain to Gate voltage
Gate to Source voltage
TJ=25°C to 150°C
RGS=20KΩ
60
60 V
±20
ID Continuous Drain Current (Note 1)
IDM Pulsed Drain current(Note 2)
VGS=10V, TC=25°C
VGS=10V, TC=100°C
84
60
A
340
IAR
EAR
EAS
dv/dt
Avalanche current(Note 2)
Repetitive avalanche energy(Note 2)
Single pulse avalanche energy(Note 3)
Peak diode recovery dv/dt(Note 4)
See fig.12,16,17
L=0.077mH, IAS=51A
51
mJ
99
5 V /ns
Total power dissipation
PD
Derating factor above 25°C
TC=25°C
140
0.90
W
W /°C
TJ Operation junction temperature
-55 to 175
TSTG
Storage temperature
-55 to 175
ºC
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
300
Mounting torque, #6-32 or M3 screw
10 (1.1)
Note: 1.Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
2.Repetitive rating: pulse width limited by junction temperature.
3.L=0.077mH, IAS≤51A, RG=25Ω, starting TJ=25˚C
4.ISD ≤ 51A, di/dt ≤ 260A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
www.nellsemi.com
Page 1 of 7
lbf.in (N.m)
1 Page SEMICONDUCTOR
ORDERING INFORMATION SCHEME
IRF1010 Series RRooHHSS
Nell High Power Products
IRF 1010 A
MOSFET series
N-Channel, IR series
Current & Voltage rating, lD & VDS
84A / 60V
Package type
A = TO-220AB
H = TO-263 (D2PAK)
Fig.1 Typical output characteristics
10000
1000
100
VGS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
10
1
0.1
0.1
4.5V 20µs pulse width
TJ=25°C
1 10 100
Drain-to-Source voltage, VDS (V)
Fig.3 Typical transfer characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1
0.1
4
5 6 7 8 9 10
Gate-to-Source voltage, VGS (V)
Fig.2 Typical output characteristics
1000
100
VGS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
10
4.5V
1
0.1
0.01
0.1
20µs pulse width
TJ=175°C
1 10 100
Drain-to-Source voltage, VDS (V)
Fig.4 Typical forward transconductance
vs. drain current
100
90
80
70
60
50
40
30
20
10
0
0
TJ = 25°C
TJ = 175°C
20 40 60 80 100 120 140
Drain-to-source current ,ID(A)
www.nellsemi.com
Page 3 of 7
3Pages SEMICONDUCTOR
IRF1010 Series RRooHHSS
Nell High Power Products
Fig.12c. Maximum avalanche energy vs.
drain current
400
350 ID
TOP
5.7A
300 9.1A
BOTTOM 51A
250
200
150
100
50
0
25 50 75 100 125 150 175
Junction temperature, TJ (°C)
Fig.13a. Basic gate charge waveform
VGS
10V
QGS
QG
QGD
Charge
Fig.13b. Gate charge test circuit
Current Regulator
Same Type as D.U.T.
50KΩ
12V 0.2µF
0.3µF
VGS
3mA
D.U.T.
+
- VDS
lG lD
Current Sampling Resistors
Fig.14 Peak diode recovery dv/dt test circuit for N-Channel MOSFET
D.U.T.
+ Circuit Layout Considerations
• Low Stray lnductance
• Ground Plane
• Low Leakage lnductance
Current Transformer
-
+
- -+
RG
• dv/dt controlled by RG
• Driver same type as D.U.T.
+
• lSD controlled by Duty Factor "D" - VDD
• D.U.T. -Device Under Test
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
*VGS=10V
D.U.T. I SD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
*VGS = 5V for Logic Level Devices
VDD
ISD
www.nellsemi.com
Page 6 of 7
6 Page | |||
ページ | 合計 : 7 ページ | ||
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