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IRF1010 の電気的特性と機能

IRF1010のメーカーはnELLです、この部品の機能は「N-Channel Power MOSFET / Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF1010
部品説明 N-Channel Power MOSFET / Transistor
メーカ nELL
ロゴ nELL ロゴ 




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IRF1010 Datasheet, IRF1010 PDF,ピン配置, 機能
SEMICONDUCTOR
IRF1010 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
DESCRIPTION
(84A, 60Volts)
The Nell IRF1010 is a three-terminal silicon
device with current conduction capability
of 84A, fast switching speed, low on-state
resistance, breakdown voltage rating of 60V,
and max. threshold voltage of 4 volts.
They are designed as an extremely efficient
and reliable device for use in a wide variety of
applications. These transistors can be operated
directly from integrated circuits.
FEATURES
RDS(ON) = 8.5mΩ @ VGS = 10V
Ultra low gate charge(86nC max.)
Low reverse transfer capacitance
(CRSS = 200pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
175°C operation temperature
D
GDS
TO-220AB
(IRF1010A)
D
G
D
S
TO-263(D2PAK)
(IRF1010H)
D (Drain)
PRODUCT SUMMARY
ID (A)
ID (A), Package Limited
VDSS (V)
RDS(ON) (mΩ)
QG(nC) max.
84
75
60
8.5 @ VGS = 10V
86
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VALUE
UNIT
VDSS
VDGR
VGS
Drain to Source voltage
Drain to Gate voltage
Gate to Source voltage
TJ=25°C to 150°C
RGS=20KΩ
60
60 V
±20
ID Continuous Drain Current (Note 1)
IDM Pulsed Drain current(Note 2)
VGS=10V, TC=25°C
VGS=10V, TC=100°C
84
60
A
340
IAR
EAR
EAS
dv/dt
Avalanche current(Note 2)
Repetitive avalanche energy(Note 2)
Single pulse avalanche energy(Note 3)
Peak diode recovery dv/dt(Note 4)
See fig.12,16,17
L=0.077mH, IAS=51A
51
mJ
99
5 V /ns
Total power dissipation
PD
Derating factor above 25°C
TC=25°C
140
0.90
W
W /°C
TJ Operation junction temperature
-55 to 175
TSTG
Storage temperature
-55 to 175
ºC
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
300
Mounting torque, #6-32 or M3 screw
10 (1.1)
Note: 1.Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
2.Repetitive rating: pulse width limited by junction temperature.
3.L=0.077mH, IAS51A, RG=25, starting TJ=25˚C
4.ISD ≤ 51A, di/dt ≤ 260A/µs, VDD V(BR)DSS, TJ ≤ 175°C.
www.nellsemi.com
Page 1 of 7
lbf.in (N.m)

1 Page





IRF1010 pdf, ピン配列
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
IRF1010 Series RRooHHSS
Nell High Power Products
IRF 1010 A
MOSFET series
N-Channel, IR series
Current & Voltage rating, lD & VDS
84A / 60V
Package type
A = TO-220AB
H = TO-263 (D2PAK)
Fig.1 Typical output characteristics
10000
1000
100
VGS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
10
1
0.1
0.1
4.5V 20µs pulse width
TJ=25°C
1 10 100
Drain-to-Source voltage, VDS (V)
Fig.3 Typical transfer characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1
0.1
4
5 6 7 8 9 10
Gate-to-Source voltage, VGS (V)
Fig.2 Typical output characteristics
1000
100
VGS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
10
4.5V
1
0.1
0.01
0.1
20µs pulse width
TJ=175°C
1 10 100
Drain-to-Source voltage, VDS (V)
Fig.4 Typical forward transconductance
vs. drain current
100
90
80
70
60
50
40
30
20
10
0
0
TJ = 25°C
TJ = 175°C
20 40 60 80 100 120 140
Drain-to-source current ,ID(A)
www.nellsemi.com
Page 3 of 7


3Pages


IRF1010 電子部品, 半導体
SEMICONDUCTOR
IRF1010 Series RRooHHSS
Nell High Power Products
Fig.12c. Maximum avalanche energy vs.
drain current
400
350 ID
TOP
5.7A
300 9.1A
BOTTOM 51A
250
200
150
100
50
0
25 50 75 100 125 150 175
Junction temperature, TJ (°C)
Fig.13a. Basic gate charge waveform
VGS
10V
QGS
QG
QGD
Charge
Fig.13b. Gate charge test circuit
Current Regulator
Same Type as D.U.T.
50KΩ
12V 0.2µF
0.3µF
VGS
3mA
D.U.T.
+
- VDS
lG lD
Current Sampling Resistors
Fig.14 Peak diode recovery dv/dt test circuit for N-Channel MOSFET
D.U.T.
+ Circuit Layout Considerations
• Low Stray lnductance
• Ground Plane
• Low Leakage lnductance
Current Transformer
-
+
- -+
RG
dv/dt controlled by RG
Driver same type as D.U.T.
+
lSD controlled by Duty Factor "D" - VDD
D.U.T. -Device Under Test
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
*VGS=10V
D.U.T. I SD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
*VGS = 5V for Logic Level Devices
VDD
ISD
www.nellsemi.com
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共有リンク

Link :


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