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C5368 の電気的特性と機能

C5368のメーカーはToshiba Semiconductorです、この部品の機能は「NPN Transistor - 2SC5368」です。


製品の詳細 ( Datasheet PDF )

部品番号 C5368
部品説明 NPN Transistor - 2SC5368
メーカ Toshiba Semiconductor
ロゴ Toshiba Semiconductor ロゴ 




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C5368 Datasheet, C5368 PDF,ピン配置, 機能
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5368
High-Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
2SC5368
Unit: mm
High speed: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 0.8 A)
High breakdown voltage: VCEO = 450 V
High DC current gain: hFE = 20 (min) (IC = 0.2 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
650
450
7
2
4
0.5
1.5
10
150
55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-10
Free Datasheet http://www.Datasheet4U.com

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C5368 pdf, ピン配列
IC – VCE
2
0.3 Common emitter
0.25 Tc = 25°C
1.6 0.2
0.15
1.2 0.1
0.05
0.8 0.04
0.03
0.02
0.4 IB = 0.01 A
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
2SC5368
IC – VBE
4
Common emitter
VCE = 5 V
3
2
1 Tc = 100°C
25
55
0
0 0.5 1 1.5
Base-emitter voltage VBE (V)
hFE – IC
100
Tc = 100°C
50
30 25
55
10
5
3
Common emitter
VCE = 5 V
1
0.01
0.03 0.05
0.1
0.3 0.5 1
Collector current IC (A)
3
VCE (sat) – IC
20
Common emitter
10 IC/IB = 8
5
3
55
1
0.5 25
0.3
Tc = 100°C
0.1
0.05
0.01
0.03 0.1 0.3 1 3
Collector current IC (A)
10
VBE (sat) – IC
0.3
Common emitter
IC/IB = 8
1
55
Tc = 100°C
0.5 25
0.3
0.1
0.03 0.05
0.1
0.3 0.5
1
Collector current IC (A)
2
Safe Operating Area
10
IC max (pulsed)*
3 IC max (continuous)
1
DC operation
Tc = 25°C
0.3
1 ms*
10 ms*
100 ms*
0.1
0.03 *: Single nonrepetitive pulse
Tc = 25°C
0.01
Curves must be derated
linearly with increase in
temperature.
0.03
0.1 0.3
1
3 10
VCEO max
30 100 300 1000
Collector-emitter voltage VCE (V)
3 2006-11-10
Free Datasheet http://www.Datasheet4U.com


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