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1D0N60DのメーカーはKECです、この部品の機能は「KHB1D0N60D」です。 |
部品番号 | 1D0N60D |
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部品説明 | KHB1D0N60D | ||
メーカ | KEC | ||
ロゴ | |||
このページの下部にプレビューと1D0N60Dダウンロード(pdfファイル)リンクがあります。 Total 6 pages
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS= 600V, ID= 1.0A
Drain-Source ON Resistance :
RDS(ON)=12 @VGS = 10V
Qg(typ.) = 5.9nC
KHB1D0N60D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
C
K
Q
H
FF
123
D
I
J
DIM MILLIMETERS
A 6.6 +_ 0.2
B 6.1 +_0.2
C 5.34 +_ 0.3
D 0.7 +_0.2
B E 2.7 +_ 0.2
F 2.3 +_0.2
EM
P
H 0.96 MAX
I 2.3 +_ 0.1
J 0.5 +_ 0.1
OK
1.5
L 0.5 +_ 0.1
M 0.8 +_ 0.1
L O 0.55 MIN
P 1.02+_ 0.2
Q 0.8+_ 0.2
1. GATE
2. DRAIN
3. SOURCE
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KHB1D0N60D KHB1D0N60I
Drain-Source Voltage
VDSS 600 V
Gate-Source Voltage
VGSS
30 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
1.0 1.0*
0.57 0.57*
3.0 3.0*
50
2.8
5.5
A
mJ
mJ
V/ns
Drain Power
Dissipation
Ta=25
Derate above 25
PD
28
0.22
28 W
0.22 W/
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
4.53
4.53 /W
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-
Ambient
RthCS
RthJA
50
110
50 /W
110 /W
* : Drain current limited by maximum junction temperature.
DPAK
A
C
O
N
H
G
FF
123
I
J
D
B
K
E
M
L
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 6.6+_ 0.2
B 6.1+_ 0.2
C 5.34+_0.3
D 0.7+_ 0.2
E 9.3 +_0.3
F 2.3 +_0.2
G 0.76+_ 0.1
H 0.96 MAX
I 2.3+_ 0.1
J 0.5+_ 0.1
K 1.8+_ 0.2
L 0.5 +_ 0.1
M 1.02 +_ 0.3
N 1.0 +_ 0.1
O 1.5
IPAK-S
D
G
2005. 10. 24
Revision No : 1
S
1/6
Free Datasheet http://www.Datasheet4U.com
1 Page KHB1D0N60D/I
VGS
TOP : 15.0 V
101 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
100
ID - VDS
10-1
10-1
100 101
Drain - Source Voltage VDS (V)
1.5
VGS = 0V
IDS = 250
1.0
Vth - Tj
0.5
0.0
-100
-50 0 50 100
Junction Temperature Tj ( C )
150
IS - VSD
100
150 C 25 C
10-1
0.2
0.4 0.6 0.8 1.0 1.2 1.4
Source - Drain Voltage VSD (V)
1.6
2005. 10. 24
Revision No : 1
ID - VGS
100
150 C
25 C
-55 C
10-1
2
468
Gate - Source Voltage VGS (V)
10
RDS(ON) - ID
50
40
30
VGS = 10V
20 VGS = 20V
10
0
0.0 0.3 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Drain Current ID (A)
2.5
VGS = 10V
IDS = 1.0A
2.0
RDS(ON) - Tj
1.5
1.0
0.5
0.0
-100
-50 0
50 100
Junction Temperture Tj ( C)
150
3/6
Free Datasheet http://www.Datasheet4U.com
3Pages KHB1D0N60D/I
- Source - Drain Diode Reverse Recovery and dv /dt
IF
0.8 x VDSS
10V
DUT
driver
VGS
VDS
ISD
(DUT)
IS
Body Diode Forword Current
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forword Voltage drop
2005. 10. 24
Revision No : 1
6/6
Free Datasheet http://www.Datasheet4U.com
6 Page | |||
ページ | 合計 : 6 ページ | ||
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PDF ダウンロード | [ 1D0N60D データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
1D0N60D | KHB1D0N60D | KEC |