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PDF IRFZ44 Data sheet ( Hoja de datos )
| Número de pieza | IRFZ44 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
| Logotipo |  |
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 1. - 60V, Power MOSFET (Transistor)  Hay una vista previa y un enlace de descarga de IRFZ44 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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Power MOSFET
IRFZ44, SiHFZ44
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
60
VGS = 10 V
67
18
25
Single
0.028
D
TO-220AB
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
•F ast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combi nation of fast swi tching,
ruggedized device des ign, low on -resistance a nd
cost-effectiveness.
The TO-220AB package is
universially preferred for
commercial-industrial app lications at powe r dissipation
levels to approximately 50 W. The low thermal resistance
and low package c ost of th e TO- 220AB con tribute to its
wide acceptance throughout the industry.
TO-220AB
IRFZ44PbF
SiHFZ44-E3
IRFZ44
SiHFZ44
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER S
YMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currente
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS ±
ID
IDM 200
Linear Derating Factor
Single Pulse Avalanche Energyb
EAS
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt 4.5
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 44 μH, Rg = 25 Ω, IAS = 51 A (see fig. 12).
c. ISD ≤ 51 A, dI/dt ≤ 250 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
e. Current limited by the package, (die current = 51 A).
LIMIT
60
20
50
36
1.0
100
150
- 55 to + 175
300
10
1.1
UNIT
V
A
W/°C
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91291
S11-0517-Rev. B, 21-Mar-11
www
.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
http://www.Datasheet4U.com
1 page  
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRFZ44, SiHFZ44
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Vary tp to obtain
required IAS
RG
10 V
tp
L
D.U.T.
IAS
0.01 Ω
+
- VDD
VDS
IAS
VDS
tp
VDD
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91291
S11-0517-Rev. B, 21-Mar-11
www
.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFZ44.PDF ] | |
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